Boron diffusion in amorphous silicon-germanium alloys

L. A. Edelman; M. S. Phen; K. S. Jones; R. G. Elliman; L. M. Rubin

doi:10.1063/1.2919085

Boron diffusion in amorphous silicon-germanium alloys

L. A. Edelman, M. S. Phen, K. S. Jones, R. G. Elliman, L. M. Rubin

Research output: Contribution to journal › Article › peer-review

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Abstract

The effect of Ge alloying on B diffusion in amorphous Si1-x Gex alloys is reported for x=0-0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76 Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si.

Original language	English
Article number	172108
Journal	Applied Physics Letters
Volume	92
Issue number	17
DOIs	https://doi.org/10.1063/1.2919085
Publication status	Published - 2008

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title = "Boron diffusion in amorphous silicon-germanium alloys",

abstract = "The effect of Ge alloying on B diffusion in amorphous Si1-x Gex alloys is reported for x=0-0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76 Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si.",

author = "Edelman, {L. A.} and Phen, {M. S.} and Jones, {K. S.} and Elliman, {R. G.} and Rubin, {L. M.}",

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AU - Rubin, L. M.

PY - 2008

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N2 - The effect of Ge alloying on B diffusion in amorphous Si1-x Gex alloys is reported for x=0-0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76 Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si.

AB - The effect of Ge alloying on B diffusion in amorphous Si1-x Gex alloys is reported for x=0-0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76 Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si.

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SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

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Boron diffusion in amorphous silicon-germanium alloys

Abstract

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