Boron diffusion in amorphous silicon-germanium alloys

L. A. Edelman, M. S. Phen, K. S. Jones, R. G. Elliman, L. M. Rubin

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    The effect of Ge alloying on B diffusion in amorphous Si1-x Gex alloys is reported for x=0-0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76 Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si.

    Original languageEnglish
    Article number172108
    JournalApplied Physics Letters
    Issue number17
    Publication statusPublished - 2008

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