TY - GEN
T1 - Boron diffusion induced shunts
AU - Zin, Ngwe
AU - Blakers, Andrew
PY - 2011
Y1 - 2011
N2 - Various types of shunt occur in solar cells, including process errors, defects, tunnel shunts between adjacent opposing diffusions and pinholes in insulating dielectric layers used to separate opposite-polarity regions. We have found that boron diffusions into small windows in dielectric layers generate pinholes in the layers following the removal of borosilicate glass (BSG) after the diffusion. These "boron-spots" lie close to the edge of the diffusion windows. If a phosphorus diffused region underlies the dielectric then subsequent metallisation can short circuit the two regions.
AB - Various types of shunt occur in solar cells, including process errors, defects, tunnel shunts between adjacent opposing diffusions and pinholes in insulating dielectric layers used to separate opposite-polarity regions. We have found that boron diffusions into small windows in dielectric layers generate pinholes in the layers following the removal of borosilicate glass (BSG) after the diffusion. These "boron-spots" lie close to the edge of the diffusion windows. If a phosphorus diffused region underlies the dielectric then subsequent metallisation can short circuit the two regions.
UR - http://www.scopus.com/inward/record.url?scp=84861020743&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2011.6185871
DO - 10.1109/PVSC.2011.6185871
M3 - Conference contribution
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 166
EP - 170
BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Y2 - 19 June 2011 through 24 June 2011
ER -