Boron implanted, laser annealed p+ emitter for n-type interdigitated back-contact solar cells

Xinbo Yang; Ralph Müller; Avi Shalav; Lujia Xu; Wensheng Liang; Rui Zhang; Qunyu Bi; Klaus Weber; Daniel Macdonald; Robert Elliman

doi:10.1016/j.egypro.2014.08.093

Boron implanted, laser annealed p+ emitter for n-type interdigitated back-contact solar cells

Xinbo Yang^*, Ralph Müller, Avi Shalav, Lujia Xu, Wensheng Liang, Rui Zhang, Qunyu Bi, Klaus Weber, Daniel Macdonald, Robert Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Ion implantation and laser processing technologies are very attractive for the fabrication of industrially feasible interdigitated back-contact (IBC) solar cells. In this work, p+ emitters were fabricated by boron implantation and laser annealing, and the electrical properties of emitters were investigated. An emitter sheet resistance (Rsh) in the range of 30-200 Ω/ could be achieved by varying the implanted dose. The saturation current density (Joe) of the passivated p+ emitter with Rsh of &sim; 125 Ω/ reached 95 fA/cm2, and the contact resistivity was determined to be as low as 5 × 10^-6 Ω cm2. Such localized p+ emitters can be applied to ntype IBC solar cells, which could avoid the high temperature thermal annealing step and related problems.

Original language	English
Pages (from-to)	320-325
Number of pages	6
Journal	Energy Procedia
Volume	55
DOIs	https://doi.org/10.1016/j.egypro.2014.08.093
Publication status	Published - 2014
Event	4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014 - Hertogenbosch, Netherlands Duration: 25 Mar 2014 → 27 Mar 2014

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10.1016/j.egypro.2014.08.093

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@article{283c0b854e0c461181caaef04405eb5c,

title = "Boron implanted, laser annealed p+ emitter for n-type interdigitated back-contact solar cells",

abstract = "Ion implantation and laser processing technologies are very attractive for the fabrication of industrially feasible interdigitated back-contact (IBC) solar cells. In this work, p+ emitters were fabricated by boron implantation and laser annealing, and the electrical properties of emitters were investigated. An emitter sheet resistance (Rsh) in the range of 30-200 Ω/ could be achieved by varying the implanted dose. The saturation current density (Joe) of the passivated p+ emitter with Rsh of \&sim; 125 Ω/ reached 95 fA/cm2, and the contact resistivity was determined to be as low as 5 × 10-6 Ω cm2. Such localized p+ emitters can be applied to ntype IBC solar cells, which could avoid the high temperature thermal annealing step and related problems.",

keywords = "Ion implantation, Laser annealing, N-type interdigitated back-contact solar cells, Silicon solar cells",

author = "Xinbo Yang and Ralph M{\"u}ller and Avi Shalav and Lujia Xu and Wensheng Liang and Rui Zhang and Qunyu Bi and Klaus Weber and Daniel Macdonald and Robert Elliman",

note = "Publisher Copyright: {\textcopyright} 2014 The Authors. Published by Elsevier Ltd.; 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014 ; Conference date: 25-03-2014 Through 27-03-2014",

year = "2014",

doi = "10.1016/j.egypro.2014.08.093",

language = "English",

volume = "55",

pages = "320--325",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Boron implanted, laser annealed p+ emitter for n-type interdigitated back-contact solar cells

AU - Yang, Xinbo

AU - Müller, Ralph

AU - Shalav, Avi

AU - Xu, Lujia

AU - Liang, Wensheng

AU - Zhang, Rui

AU - Bi, Qunyu

AU - Weber, Klaus

AU - Macdonald, Daniel

AU - Elliman, Robert

PY - 2014

Y1 - 2014

N2 - Ion implantation and laser processing technologies are very attractive for the fabrication of industrially feasible interdigitated back-contact (IBC) solar cells. In this work, p+ emitters were fabricated by boron implantation and laser annealing, and the electrical properties of emitters were investigated. An emitter sheet resistance (Rsh) in the range of 30-200 Ω/ could be achieved by varying the implanted dose. The saturation current density (Joe) of the passivated p+ emitter with Rsh of &sim; 125 Ω/ reached 95 fA/cm2, and the contact resistivity was determined to be as low as 5 × 10-6 Ω cm2. Such localized p+ emitters can be applied to ntype IBC solar cells, which could avoid the high temperature thermal annealing step and related problems.

AB - Ion implantation and laser processing technologies are very attractive for the fabrication of industrially feasible interdigitated back-contact (IBC) solar cells. In this work, p+ emitters were fabricated by boron implantation and laser annealing, and the electrical properties of emitters were investigated. An emitter sheet resistance (Rsh) in the range of 30-200 Ω/ could be achieved by varying the implanted dose. The saturation current density (Joe) of the passivated p+ emitter with Rsh of &sim; 125 Ω/ reached 95 fA/cm2, and the contact resistivity was determined to be as low as 5 × 10-6 Ω cm2. Such localized p+ emitters can be applied to ntype IBC solar cells, which could avoid the high temperature thermal annealing step and related problems.

KW - Ion implantation

KW - Laser annealing

KW - N-type interdigitated back-contact solar cells

KW - Silicon solar cells

UR - https://www.scopus.com/pages/publications/84919907260

U2 - 10.1016/j.egypro.2014.08.093

DO - 10.1016/j.egypro.2014.08.093

M3 - Conference article

SN - 1876-6102

VL - 55

SP - 320

EP - 325

JO - Energy Procedia

JF - Energy Procedia

T2 - 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014

Y2 - 25 March 2014 through 27 March 2014

ER -

Boron implanted, laser annealed p+ emitter for n-type interdigitated back-contact solar cells

Abstract

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