Boron nanobelts grown under intensive ion bombardment

W. T. Li*, R. Boswell, J. D. Fitz Gerald

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    High-quality α -tetragonal crystalline boron nanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growing boron nanobelts at a high substrate temperature (∼1200 °C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.

    Original languageEnglish
    Pages (from-to)L7-L9
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume26
    Issue number1
    DOIs
    Publication statusPublished - 2008

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