Boron nanobelts grown under intensive ion bombardment

W. T. Li; R. Boswell; J. D. Fitz Gerald

doi:10.1116/1.2827498

Boron nanobelts grown under intensive ion bombardment

W. T. Li^*, R. Boswell, J. D. Fitz Gerald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

High-quality α -tetragonal crystalline boron nanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growing boron nanobelts at a high substrate temperature (∼1200 °C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.

Original language	English
Pages (from-to)	L7-L9
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	26
Issue number	1
DOIs	https://doi.org/10.1116/1.2827498
Publication status	Published - 2008

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abstract = "High-quality α -tetragonal crystalline boron nanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growing boron nanobelts at a high substrate temperature (∼1200 °C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.",

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AB - High-quality α -tetragonal crystalline boron nanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growing boron nanobelts at a high substrate temperature (∼1200 °C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.

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M3 - Article

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Boron nanobelts grown under intensive ion bombardment

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