Boron nanobelts grown under intensive ion bombardment

W. T. Li; R. Boswell; J. D. Fitz Gerald

doi:10.1116/1.2827498

Boron nanobelts grown under intensive ion bombardment

W. T. Li^*
, R. Boswell
, J. D. Fitz Gerald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

High-quality α -tetragonal crystalline boron nanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growing boron nanobelts at a high substrate temperature (∼1200 °C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.

Original language	English
Pages (from-to)	L7-L9
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	26
Issue number	1
DOIs	https://doi.org/10.1116/1.2827498
Publication status	Published - 2008

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title = "Boron nanobelts grown under intensive ion bombardment",

abstract = "High-quality α -tetragonal crystalline boron nanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growing boron nanobelts at a high substrate temperature (∼1200 °C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.",

author = "Li, \{W. T.\} and R. Boswell and \{Fitz Gerald\}, \{J. D.\}",

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T1 - Boron nanobelts grown under intensive ion bombardment

AU - Li, W. T.

AU - Boswell, R.

AU - Fitz Gerald, J. D.

PY - 2008

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N2 - High-quality α -tetragonal crystalline boron nanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growing boron nanobelts at a high substrate temperature (∼1200 °C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.

AB - High-quality α -tetragonal crystalline boron nanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growing boron nanobelts at a high substrate temperature (∼1200 °C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.

UR - https://www.scopus.com/pages/publications/38849189489

U2 - 10.1116/1.2827498

DO - 10.1116/1.2827498

M3 - Article

SN - 1071-1023

VL - 26

SP - L7-L9

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Boron nanobelts grown under intensive ion bombardment

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