Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

M. Forster*, E. Fourmond, F. E. Rougieux, A. Cuevas, R. Gotoh, K. Fujiwara, S. Uda, M. Lemiti

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    51 Citations (Scopus)


    We study the boron-oxygen defect in Si co-doped with gallium and boron with the hole density 10 times higher than the boron concentration. Instead of the linear dependence of the defect density on the hole density observed in boron and phosphorus compensated silicon, we find a proportionality to the boron concentration. This indicates the participation of substitutional, rather than interstitial, boron in the defect complex. The measured defect formation rate constant is proportional to the hole density squared, which gives credit to latent defect models against defect reactions limited by the diffusion and trapping of oxygen dimers by boron atoms.

    Original languageEnglish
    Article number042110
    JournalApplied Physics Letters
    Issue number4
    Publication statusPublished - 23 Jan 2012


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