TY - GEN
T1 - Boron, phosphorus and aluminum gettering of iron in crystalline silicon
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
AU - Phang, S. P.
AU - Macdonald, D.
PY - 2010
Y1 - 2010
N2 - A direct comparison of boron diffusion gettering, phosphorus gettering, and aluminum annealing gettering of iron is presented, using both experiment and simulation results. Float zone silicon samples were implanted with Fe and exposed to either B, P, or Al gettering at various temperatures for experimental measurements. The gettering model simulates dopant diffusion, segregation to doped layers, and diffusion of interstitial iron towards the gettering layers. The segregation model for Boron diffusion gettering agrees with the experiment results that boron diffusion gettering was completely ineffective at gettering Fe for diffusion temperatures above 850°C. Experiment results show that phosphorus diffusion gettering was effective in removing more than 90% of the interstitial iron across a range of temperatures and doses. Surprisingly, even relatively light phosphorus diffusions (145 Ω/□) were found to give very effective gettering. The phosphorus diffusion gettering model agrees reasonably with experimental results in terms of the amount gettered, but shows an opposite trend with temperature between 780°C and 850°C. Aluminum annealing gettering is very effective and the experimental detection limit prevents accurate measurements for comparison with the model.
AB - A direct comparison of boron diffusion gettering, phosphorus gettering, and aluminum annealing gettering of iron is presented, using both experiment and simulation results. Float zone silicon samples were implanted with Fe and exposed to either B, P, or Al gettering at various temperatures for experimental measurements. The gettering model simulates dopant diffusion, segregation to doped layers, and diffusion of interstitial iron towards the gettering layers. The segregation model for Boron diffusion gettering agrees with the experiment results that boron diffusion gettering was completely ineffective at gettering Fe for diffusion temperatures above 850°C. Experiment results show that phosphorus diffusion gettering was effective in removing more than 90% of the interstitial iron across a range of temperatures and doses. Surprisingly, even relatively light phosphorus diffusions (145 Ω/□) were found to give very effective gettering. The phosphorus diffusion gettering model agrees reasonably with experimental results in terms of the amount gettered, but shows an opposite trend with temperature between 780°C and 850°C. Aluminum annealing gettering is very effective and the experimental detection limit prevents accurate measurements for comparison with the model.
UR - http://www.scopus.com/inward/record.url?scp=78650126759&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5616886
DO - 10.1109/PVSC.2010.5616886
M3 - Conference contribution
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 352
EP - 356
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -