Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide

Alberto Della Torre; Milan Sinobad; Barry Luther-Davies; Pan Ma; Stephen Madden; Sukanta Debbarma; Khu Vu; David J. Moss; Arnan Mitchell; Jean Michel Hartmann; Jean Marc Fedeli; Christelle Monat; Christian Grillet

doi:10.1117/12.2517866

Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide

Alberto Della Torre^*, Milan Sinobad, Barry Luther-Davies, Pan Ma, Stephen Madden, Sukanta Debbarma, Khu Vu, David J. Moss, Arnan Mitchell, Jean Michel Hartmann, Jean Marc Fedeli, Christelle Monat, Christian Grillet

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We present silicon-germanium on silicon waveguides as a suitable platform for on-chip supercontinuum generation in the mid-infrared. We report low propagation loss (<0.4dB/cm) in the 3.5-5 μm range, leading to an octave spanning supercontinuum extending up to 8.5 μm with a high average power of more than 10 mW on-chip. Furthermore, we present the addition of a chalcogenide cladding layer as a simple post-processing technique to fine tune the waveguide dispersion which, in turn, governs the properties of the generated supercontinuum.

Original language	English
Title of host publication	Integrated Optics
Subtitle of host publication	Devices, Materials, and Technologies XXIII
Editors	Sonia M. Garcia-Blanco, Pavel Cheben
Publisher	SPIE
ISBN (Electronic)	9781510624849
DOIs	https://doi.org/10.1117/12.2517866
Publication status	Published - 2019
Externally published	Yes
Event	Integrated Optics: Devices, Materials, and Technologies XXIII 2019 - San Francisco, United States Duration: 4 Feb 2019 → 7 Feb 2019

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10921
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Integrated Optics: Devices, Materials, and Technologies XXIII 2019
Country/Territory	United States
City	San Francisco
Period	4/02/19 → 7/02/19

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10.1117/12.2517866

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Della Torre, A., Sinobad, M., Luther-Davies, B., Ma, P., Madden, S., Debbarma, S., Vu, K., Moss, D. J., Mitchell, A., Hartmann, J. M., Fedeli, J. M., Monat, C., & Grillet, C. (2019). Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide. In S. M. Garcia-Blanco, & P. Cheben (Eds.), Integrated Optics: Devices, Materials, and Technologies XXIII Article 109210A (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10921). SPIE. https://doi.org/10.1117/12.2517866

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title = "Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide",

abstract = "We present silicon-germanium on silicon waveguides as a suitable platform for on-chip supercontinuum generation in the mid-infrared. We report low propagation loss (<0.4dB/cm) in the 3.5-5 μm range, leading to an octave spanning supercontinuum extending up to 8.5 μm with a high average power of more than 10 mW on-chip. Furthermore, we present the addition of a chalcogenide cladding layer as a simple post-processing technique to fine tune the waveguide dispersion which, in turn, governs the properties of the generated supercontinuum.",

keywords = "Dispersion trimming, Integrated optics, Mid-infrared, Nonlinear optics, Supercontinuum generation",

author = "{Della Torre}, Alberto and Milan Sinobad and Barry Luther-Davies and Pan Ma and Stephen Madden and Sukanta Debbarma and Khu Vu and Moss, {David J.} and Arnan Mitchell and Hartmann, {Jean Michel} and Fedeli, {Jean Marc} and Christelle Monat and Christian Grillet",

note = "Publisher Copyright: {\textcopyright} 2019 SPIE.; Integrated Optics: Devices, Materials, and Technologies XXIII 2019 ; Conference date: 04-02-2019 Through 07-02-2019",

year = "2019",

doi = "10.1117/12.2517866",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Garcia-Blanco, {Sonia M.} and Pavel Cheben",

booktitle = "Integrated Optics",

address = "United States",

}

Della Torre, A, Sinobad, M, Luther-Davies, B, Ma, P, Madden, S, Debbarma, S, Vu, K, Moss, DJ, Mitchell, A, Hartmann, JM, Fedeli, JM, Monat, C & Grillet, C 2019, Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide. in SM Garcia-Blanco & P Cheben (eds), Integrated Optics: Devices, Materials, and Technologies XXIII., 109210A, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10921, SPIE, Integrated Optics: Devices, Materials, and Technologies XXIII 2019, San Francisco, United States, 4/02/19. https://doi.org/10.1117/12.2517866

Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide. / Della Torre, Alberto; Sinobad, Milan; Luther-Davies, Barry et al.
Integrated Optics: Devices, Materials, and Technologies XXIII. ed. / Sonia M. Garcia-Blanco; Pavel Cheben. SPIE, 2019. 109210A (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10921).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide

AU - Della Torre, Alberto

AU - Sinobad, Milan

AU - Luther-Davies, Barry

AU - Ma, Pan

AU - Madden, Stephen

AU - Debbarma, Sukanta

AU - Vu, Khu

AU - Moss, David J.

AU - Mitchell, Arnan

AU - Hartmann, Jean Michel

AU - Fedeli, Jean Marc

AU - Monat, Christelle

AU - Grillet, Christian

PY - 2019

Y1 - 2019

N2 - We present silicon-germanium on silicon waveguides as a suitable platform for on-chip supercontinuum generation in the mid-infrared. We report low propagation loss (<0.4dB/cm) in the 3.5-5 μm range, leading to an octave spanning supercontinuum extending up to 8.5 μm with a high average power of more than 10 mW on-chip. Furthermore, we present the addition of a chalcogenide cladding layer as a simple post-processing technique to fine tune the waveguide dispersion which, in turn, governs the properties of the generated supercontinuum.

AB - We present silicon-germanium on silicon waveguides as a suitable platform for on-chip supercontinuum generation in the mid-infrared. We report low propagation loss (<0.4dB/cm) in the 3.5-5 μm range, leading to an octave spanning supercontinuum extending up to 8.5 μm with a high average power of more than 10 mW on-chip. Furthermore, we present the addition of a chalcogenide cladding layer as a simple post-processing technique to fine tune the waveguide dispersion which, in turn, governs the properties of the generated supercontinuum.

KW - Dispersion trimming

KW - Integrated optics

KW - Mid-infrared

KW - Nonlinear optics

KW - Supercontinuum generation

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DO - 10.1117/12.2517866

M3 - Conference contribution

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Integrated Optics

A2 - Garcia-Blanco, Sonia M.

A2 - Cheben, Pavel

PB - SPIE

T2 - Integrated Optics: Devices, Materials, and Technologies XXIII 2019

Y2 - 4 February 2019 through 7 February 2019

ER -

Della Torre A, Sinobad M, Luther-Davies B, Ma P, Madden S, Debbarma S et al. Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide. In Garcia-Blanco SM, Cheben P, editors, Integrated Optics: Devices, Materials, and Technologies XXIII. SPIE. 2019. 109210A. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2517866

Bright octave-span mid-IR supercontinuum generation in silicon germanium waveguide

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