Bright on-chip mid-IR supercontinuum generation to 7.7μm in silicon germanium-on-silicon platform

Milan Sinobad*, Alberto Della Torre, Barry Luther-Davies, Pan Ma, Stephen Madden, David J. Moss, Arnan Mitchell, Regis Orobtchouk, Salim Boutami, Jean Michel Hartmann, Jean Marc Fedeli, Christelle Monat, Christian Grillet

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    We report mid-IR supercontinuum generation, from 2.9 to 7.7μm, in a CMOS compatible silicon-germanium waveguide. This 1.3 octave bright supercontinuum has been achieved in a low loss dispersion engineered air-clad Si<inf>0.6</inf>Ge<inf>0.4</inf>/Si waveguide.

    Original languageEnglish
    Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
    PublisherOptica Publishing Group
    ISBN (Print)9781943580439
    DOIs
    Publication statusPublished - 2018
    EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland
    Duration: 2 Jul 20185 Jul 2018

    Publication series

    NameOptics InfoBase Conference Papers
    VolumePart F101-IPRSN 2018
    ISSN (Electronic)2162-2701

    Conference

    ConferenceIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
    Country/TerritorySwitzerland
    CityZurich
    Period2/07/185/07/18

    Fingerprint

    Dive into the research topics of 'Bright on-chip mid-IR supercontinuum generation to 7.7μm in silicon germanium-on-silicon platform'. Together they form a unique fingerprint.

    Cite this