Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors

Kun Peng; Patrick Parkinson; Jessica L. Boland; Qian Gao; Yesaya C. Wenas; Christopher L. Davies; Ziyuan Li; Lan Fu; Michael B. Johnston; Hark H. Tan; Chennupati Jagadish

doi:10.1021/acs.nanolett.6b01528

Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors

Kun Peng^*, Patrick Parkinson, Jessica L. Boland, Qian Gao, Yesaya C. Wenas, Christopher L. Davies, Ziyuan Li, Lan Fu, Michael B. Johnston, Hark H. Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend toward size reduction, higher component integration, and performance improvement for advanced THz-TDS systems is of increasing interest. The use of single semiconducting nanowires for terahertz (THz) detection is a nascent field that has great potential to realize future highly integrated THz systems. In order to develop such components, optimized material optoelectronic properties and careful device design are necessary. Here, we present antenna-optimized photoconductive detectors based on single InP nanowires with superior properties of high carrier mobility (∼1260 cm² V^-1 s^-1) and low dark current (∼10 pA), which exhibit excellent sensitivity and broadband performance. We demonstrate that these nanowire THz detectors can provide high quality time-domain spectra for materials characterization in a THz-TDS system, a critical step toward future application in advanced THz-TDS system with high spectral and spatial resolution.

Original language	English
Pages (from-to)	4925-4931
Number of pages	7
Journal	Nano Letters
Volume	16
Issue number	8
DOIs	https://doi.org/10.1021/acs.nanolett.6b01528
Publication status	Published - 10 Aug 2016

Access to Document

10.1021/acs.nanolett.6b01528

Cite this

@article{1475bd3807734cfb9afeaa853faff784,

title = "Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors",

abstract = "Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend toward size reduction, higher component integration, and performance improvement for advanced THz-TDS systems is of increasing interest. The use of single semiconducting nanowires for terahertz (THz) detection is a nascent field that has great potential to realize future highly integrated THz systems. In order to develop such components, optimized material optoelectronic properties and careful device design are necessary. Here, we present antenna-optimized photoconductive detectors based on single InP nanowires with superior properties of high carrier mobility (∼1260 cm2 V-1 s-1) and low dark current (∼10 pA), which exhibit excellent sensitivity and broadband performance. We demonstrate that these nanowire THz detectors can provide high quality time-domain spectra for materials characterization in a THz-TDS system, a critical step toward future application in advanced THz-TDS system with high spectral and spatial resolution.",

keywords = "Nanowire, nano-optics, terahertz optoelectronics, ultrafast",

author = "Kun Peng and Patrick Parkinson and Boland, {Jessica L.} and Qian Gao and Wenas, {Yesaya C.} and Davies, {Christopher L.} and Ziyuan Li and Lan Fu and Johnston, {Michael B.} and Tan, {Hark H.} and Chennupati Jagadish",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = aug,

day = "10",

doi = "10.1021/acs.nanolett.6b01528",

language = "English",

volume = "16",

pages = "4925--4931",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors

AU - Peng, Kun

AU - Parkinson, Patrick

AU - Boland, Jessica L.

AU - Gao, Qian

AU - Wenas, Yesaya C.

AU - Davies, Christopher L.

AU - Li, Ziyuan

AU - Fu, Lan

AU - Johnston, Michael B.

AU - Tan, Hark H.

AU - Jagadish, Chennupati

PY - 2016/8/10

Y1 - 2016/8/10

N2 - Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend toward size reduction, higher component integration, and performance improvement for advanced THz-TDS systems is of increasing interest. The use of single semiconducting nanowires for terahertz (THz) detection is a nascent field that has great potential to realize future highly integrated THz systems. In order to develop such components, optimized material optoelectronic properties and careful device design are necessary. Here, we present antenna-optimized photoconductive detectors based on single InP nanowires with superior properties of high carrier mobility (∼1260 cm2 V-1 s-1) and low dark current (∼10 pA), which exhibit excellent sensitivity and broadband performance. We demonstrate that these nanowire THz detectors can provide high quality time-domain spectra for materials characterization in a THz-TDS system, a critical step toward future application in advanced THz-TDS system with high spectral and spatial resolution.

AB - Terahertz time-domain spectroscopy (THz-TDS) has emerged as a powerful tool for materials characterization and imaging. A trend toward size reduction, higher component integration, and performance improvement for advanced THz-TDS systems is of increasing interest. The use of single semiconducting nanowires for terahertz (THz) detection is a nascent field that has great potential to realize future highly integrated THz systems. In order to develop such components, optimized material optoelectronic properties and careful device design are necessary. Here, we present antenna-optimized photoconductive detectors based on single InP nanowires with superior properties of high carrier mobility (∼1260 cm2 V-1 s-1) and low dark current (∼10 pA), which exhibit excellent sensitivity and broadband performance. We demonstrate that these nanowire THz detectors can provide high quality time-domain spectra for materials characterization in a THz-TDS system, a critical step toward future application in advanced THz-TDS system with high spectral and spatial resolution.

KW - Nanowire

KW - nano-optics

KW - terahertz optoelectronics

KW - ultrafast

UR - http://www.scopus.com/inward/record.url?scp=84981356893&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.6b01528

DO - 10.1021/acs.nanolett.6b01528

M3 - Article

SN - 1530-6984

VL - 16

SP - 4925

EP - 4931

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -

Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this