TY - JOUR
T1 - Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors
AU - Petravic, M.
AU - Gao, Q.
AU - Llewellyn, D.
AU - Deenapanray, P. N.K.
AU - Macdonald, D.
AU - Crotti, C.
PY - 2006/7/10
Y1 - 2006/7/10
N2 - We have used high-resolution near-edge X-ray absorption fine structure spectroscopy to study the N 1s → 1π* resonance of N2 trapped below the surface of several compound semiconductors. The vibrational fine structure, observed from all samples under consideration, exhibits substantially larger lifetime linewidth Γ than in isolated N2. A clear correlation between Γ and the lattice constant of the host matrix has been found, indicating that the broadening of vibrational levels is governed by a finite probability of the electron to escape from the π* orbital into the matrix.
AB - We have used high-resolution near-edge X-ray absorption fine structure spectroscopy to study the N 1s → 1π* resonance of N2 trapped below the surface of several compound semiconductors. The vibrational fine structure, observed from all samples under consideration, exhibits substantially larger lifetime linewidth Γ than in isolated N2. A clear correlation between Γ and the lattice constant of the host matrix has been found, indicating that the broadening of vibrational levels is governed by a finite probability of the electron to escape from the π* orbital into the matrix.
UR - http://www.scopus.com/inward/record.url?scp=33746933253&partnerID=8YFLogxK
U2 - 10.1016/j.cplett.2006.05.056
DO - 10.1016/j.cplett.2006.05.056
M3 - Article
SN - 0009-2614
VL - 425
SP - 262
EP - 266
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 4-6
ER -