Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors

M. Petravic; Q. Gao; D. Llewellyn; P. N.K. Deenapanray; D. Macdonald; C. Crotti

doi:10.1016/j.cplett.2006.05.056

Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors

M. Petravic^*
, Q. Gao
, D. Llewellyn
, P. N.K. Deenapanray
, D. Macdonald
, C. Crotti

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

We have used high-resolution near-edge X-ray absorption fine structure spectroscopy to study the N 1s → 1π^* resonance of N₂ trapped below the surface of several compound semiconductors. The vibrational fine structure, observed from all samples under consideration, exhibits substantially larger lifetime linewidth Γ than in isolated N₂. A clear correlation between Γ and the lattice constant of the host matrix has been found, indicating that the broadening of vibrational levels is governed by a finite probability of the electron to escape from the π^* orbital into the matrix.

Original language	English
Pages (from-to)	262-266
Number of pages	5
Journal	Chemical Physics Letters
Volume	425
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2006.05.056
Publication status	Published - 10 Jul 2006

Access to Document

10.1016/j.cplett.2006.05.056

Cite this

@article{6069d41aceef4c52a832f7f0d57370a0,

title = "Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors",

abstract = "We have used high-resolution near-edge X-ray absorption fine structure spectroscopy to study the N 1s → 1π* resonance of N2 trapped below the surface of several compound semiconductors. The vibrational fine structure, observed from all samples under consideration, exhibits substantially larger lifetime linewidth Γ than in isolated N2. A clear correlation between Γ and the lattice constant of the host matrix has been found, indicating that the broadening of vibrational levels is governed by a finite probability of the electron to escape from the π* orbital into the matrix.",

author = "M. Petravic and Q. Gao and D. Llewellyn and Deenapanray, \{P. N.K.\} and D. Macdonald and C. Crotti",

year = "2006",

month = jul,

day = "10",

doi = "10.1016/j.cplett.2006.05.056",

language = "English",

volume = "425",

pages = "262--266",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

number = "4-6",

}

TY - JOUR

T1 - Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors

AU - Petravic, M.

AU - Gao, Q.

AU - Llewellyn, D.

AU - Deenapanray, P. N.K.

AU - Macdonald, D.

AU - Crotti, C.

PY - 2006/7/10

Y1 - 2006/7/10

N2 - We have used high-resolution near-edge X-ray absorption fine structure spectroscopy to study the N 1s → 1π* resonance of N2 trapped below the surface of several compound semiconductors. The vibrational fine structure, observed from all samples under consideration, exhibits substantially larger lifetime linewidth Γ than in isolated N2. A clear correlation between Γ and the lattice constant of the host matrix has been found, indicating that the broadening of vibrational levels is governed by a finite probability of the electron to escape from the π* orbital into the matrix.

AB - We have used high-resolution near-edge X-ray absorption fine structure spectroscopy to study the N 1s → 1π* resonance of N2 trapped below the surface of several compound semiconductors. The vibrational fine structure, observed from all samples under consideration, exhibits substantially larger lifetime linewidth Γ than in isolated N2. A clear correlation between Γ and the lattice constant of the host matrix has been found, indicating that the broadening of vibrational levels is governed by a finite probability of the electron to escape from the π* orbital into the matrix.

UR - https://www.scopus.com/pages/publications/33746933253

U2 - 10.1016/j.cplett.2006.05.056

DO - 10.1016/j.cplett.2006.05.056

M3 - Article

SN - 0009-2614

VL - 425

SP - 262

EP - 266

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 4-6

ER -

Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this