Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

Juqing Liu; Zongyou Yin; Xiehong Cao; Fei Zhao; Anping Lin; Linghai Xie; Quli Fan; Freddy Boey; Hua Zhang; Wei Huang

doi:10.1021/nn100877s

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

Juqing Liu, Zongyou Yin, Xiehong Cao, Fei Zhao, Anping Lin, Linghai Xie^*, Quli Fan, Freddy Boey, Hua Zhang, Wei Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

224 Citations (Scopus)

Abstract

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current - voltage (I - V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10⁴ - 10 ⁵) and low switching threshold voltage (0.5 - 1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

Original language	English
Pages (from-to)	3987-3992
Number of pages	6
Journal	ACS Nano
Volume	4
Issue number	7
DOIs	https://doi.org/10.1021/nn100877s
Publication status	Published - 27 Jul 2010
Externally published	Yes

Access to Document

10.1021/nn100877s

Cite this

@article{e1b97e321aa3469a8b41c8978445c341,

title = "Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes",

abstract = "A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current - voltage (I - V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104 - 10 5) and low switching threshold voltage (0.5 - 1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.",

keywords = "bulk heterojunction, polymer memory, reduced graphene oxide, sheet resistance, write-once-read-manytimes",

author = "Juqing Liu and Zongyou Yin and Xiehong Cao and Fei Zhao and Anping Lin and Linghai Xie and Quli Fan and Freddy Boey and Hua Zhang and Wei Huang",

year = "2010",

month = jul,

day = "27",

doi = "10.1021/nn100877s",

language = "English",

volume = "4",

pages = "3987--3992",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

AU - Liu, Juqing

AU - Yin, Zongyou

AU - Cao, Xiehong

AU - Zhao, Fei

AU - Lin, Anping

AU - Xie, Linghai

AU - Fan, Quli

AU - Boey, Freddy

AU - Zhang, Hua

AU - Huang, Wei

PY - 2010/7/27

Y1 - 2010/7/27

N2 - A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current - voltage (I - V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104 - 10 5) and low switching threshold voltage (0.5 - 1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

AB - A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current - voltage (I - V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (104 - 10 5) and low switching threshold voltage (0.5 - 1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

KW - bulk heterojunction

KW - polymer memory

KW - reduced graphene oxide

KW - sheet resistance

KW - write-once-read-manytimes

UR - http://www.scopus.com/inward/record.url?scp=77955547629&partnerID=8YFLogxK

U2 - 10.1021/nn100877s

DO - 10.1021/nn100877s

M3 - Article

SN - 1936-0851

VL - 4

SP - 3987

EP - 3992

JO - ACS Nano

JF - ACS Nano

IS - 7

ER -

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this