Can insulating the gates lead us to stable modulation-doped hole quantum devices?

D. Waddington; A. M. Burke; S. Fricke; H. H. Tan; C. Jagadish; A. R. Hamilton; K. Trunov; D. Reuter; A. D. Wieck; A. P. Micolich

doi:10.1109/COMMAD.2010.5699738

Can insulating the gates lead us to stable modulation-doped hole quantum devices?

D. Waddington, A. M. Burke, S. Fricke, H. H. Tan, C. Jagadish, A. R. Hamilton, K. Trunov, D. Reuter, A. D. Wieck, A. P. Micolich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of comparative studies of devices made with and without oxide-insulated gates to establish whether this leads to a significant enhancement in device stability and reduced gate hysteresis and noise.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	199-200
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699738
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

Access to Document

10.1109/COMMAD.2010.5699738

Cite this

Waddington, D., Burke, A. M., Fricke, S., Tan, H. H., Jagadish, C., Hamilton, A. R., Trunov, K., Reuter, D., Wieck, A. D., & Micolich, A. P. (2010). Can insulating the gates lead us to stable modulation-doped hole quantum devices? In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 199-200). Article 5699738 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699738

@inproceedings{955949a774034ba8bd0d77213b579778,

title = "Can insulating the gates lead us to stable modulation-doped hole quantum devices?",

abstract = "We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of comparative studies of devices made with and without oxide-insulated gates to establish whether this leads to a significant enhancement in device stability and reduced gate hysteresis and noise.",

author = "D. Waddington and Burke, {A. M.} and S. Fricke and Tan, {H. H.} and C. Jagadish and Hamilton, {A. R.} and K. Trunov and D. Reuter and Wieck, {A. D.} and Micolich, {A. P.}",

year = "2010",

doi = "10.1109/COMMAD.2010.5699738",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "199--200",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Waddington, D, Burke, AM, Fricke, S, Tan, HH , Jagadish, C, Hamilton, AR, Trunov, K, Reuter, D, Wieck, AD & Micolich, AP 2010, Can insulating the gates lead us to stable modulation-doped hole quantum devices? in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699738, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 199-200, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699738

Can insulating the gates lead us to stable modulation-doped hole quantum devices? / Waddington, D.; Burke, A. M.; Fricke, S. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 199-200 5699738 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review