Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?

Fiacre E. Rougieux, Nicholas E. Grant, Daniel Macdonald, John D. Murphy

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Citations (Scopus)

    Abstract

    Recombination active defects are found in as-grown high-purity Czochralski (Cz) and Floating Zone (FZ) n-type silicon wafers. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use photoluminescence imaging, lifetime spectroscopy, and defect imaging along the ingot to help identify the defect(s). Our experimental findings suggest that vacancy-related complexes incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.

    Original languageEnglish
    Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781479979448
    DOIs
    Publication statusPublished - 14 Dec 2015
    Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
    Duration: 14 Jun 201519 Jun 2015

    Publication series

    Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

    Conference

    Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
    Country/TerritoryUnited States
    CityNew Orleans
    Period14/06/1519/06/15

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