Capacitive effects in quasi-steady-state voltage and lifetime measurements of silicon devices

A. Cuevas*, F. Recart

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)


    When measuring I-V characteristics and carrier lifetimes in quasi-steady-state (QSS) conditions, it is important to consider the time dependence of the charge due to excess carriers within the device. This paper shows that the space-charge region present in pn -junction devices and in many lifetime test structures can produce a significant capacitive effect when measuring the low voltage and low carrier density range of QSS I-V curves. Both computer modeling and experiments show that the junction capacitance is particularly significant in the case of low-resistivity silicon wafers, but it can also be noticeable in intermediate and high-resistivity samples. The paper demonstrates that the static I-V characteristics can be accurately reconstructed using a simple analytical model for the space-charge region. It thus fills a gap in the understanding of the low injection range of QSS voltage and lifetime measurements.

    Original languageEnglish
    Article number074507
    JournalJournal of Applied Physics
    Issue number7
    Publication statusPublished - 1 Oct 2005


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