Carrier capture and relaxation in Stranski-Krastanow quantum dots

C. Lobo; N. Perret; D. Morris; J. Zou; D. J.H. Cockayne; M. B. Johnston; M. Gal; R. Leon

doi:10.1103/PhysRevB.62.2737

Carrier capture and relaxation in Stranski-Krastanow quantum dots

C. Lobo, N. Perret, D. Morris, J. Zou, D. J.H. Cockayne, M. B. Johnston, M. Gal, R. Leon

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We have investigated the structure and optical properties of (Formula presented) quantum dots (QD’s) formed by the Stranski-Krastanow growth mode during metal-organic chemical-vapor deposition. We find that (Formula presented) QD structures display a higher energy QD luminescence emission and a stronger wetting-layer emission than (100) QD’s of similar diameter and density. Temperature-dependent photoluminescence (PL) measurements reveal shallow QD confinement energies and strong interaction between neighboring quantum dots. Longer PL rise times of the ground-state emission of (Formula presented) QD’s compared to (100) QD’s are ascribed to the effect of differing numbers, energies, and level spacings of QD confined states on intersublevel relaxation mechanisms at low-carrier excitation densities.

Original language	English
Pages (from-to)	2737-2742
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	62
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.62.2737
Publication status	Published - 2000

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@article{20f4ccc24c7841d793e70c0b351e9efe,

title = "Carrier capture and relaxation in Stranski-Krastanow quantum dots",

abstract = "We have investigated the structure and optical properties of (Formula presented) quantum dots (QD{\textquoteright}s) formed by the Stranski-Krastanow growth mode during metal-organic chemical-vapor deposition. We find that (Formula presented) QD structures display a higher energy QD luminescence emission and a stronger wetting-layer emission than (100) QD{\textquoteright}s of similar diameter and density. Temperature-dependent photoluminescence (PL) measurements reveal shallow QD confinement energies and strong interaction between neighboring quantum dots. Longer PL rise times of the ground-state emission of (Formula presented) QD{\textquoteright}s compared to (100) QD{\textquoteright}s are ascribed to the effect of differing numbers, energies, and level spacings of QD confined states on intersublevel relaxation mechanisms at low-carrier excitation densities.",

author = "C. Lobo and N. Perret and D. Morris and J. Zou and Cockayne, {D. J.H.} and Johnston, {M. B.} and M. Gal and R. Leon",

year = "2000",

doi = "10.1103/PhysRevB.62.2737",

language = "English",

volume = "62",

pages = "2737--2742",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Carrier capture and relaxation in Stranski-Krastanow quantum dots

AU - Lobo, C.

AU - Perret, N.

AU - Morris, D.

AU - Zou, J.

AU - Cockayne, D. J.H.

AU - Johnston, M. B.

AU - Gal, M.

AU - Leon, R.

PY - 2000

Y1 - 2000

N2 - We have investigated the structure and optical properties of (Formula presented) quantum dots (QD’s) formed by the Stranski-Krastanow growth mode during metal-organic chemical-vapor deposition. We find that (Formula presented) QD structures display a higher energy QD luminescence emission and a stronger wetting-layer emission than (100) QD’s of similar diameter and density. Temperature-dependent photoluminescence (PL) measurements reveal shallow QD confinement energies and strong interaction between neighboring quantum dots. Longer PL rise times of the ground-state emission of (Formula presented) QD’s compared to (100) QD’s are ascribed to the effect of differing numbers, energies, and level spacings of QD confined states on intersublevel relaxation mechanisms at low-carrier excitation densities.

AB - We have investigated the structure and optical properties of (Formula presented) quantum dots (QD’s) formed by the Stranski-Krastanow growth mode during metal-organic chemical-vapor deposition. We find that (Formula presented) QD structures display a higher energy QD luminescence emission and a stronger wetting-layer emission than (100) QD’s of similar diameter and density. Temperature-dependent photoluminescence (PL) measurements reveal shallow QD confinement energies and strong interaction between neighboring quantum dots. Longer PL rise times of the ground-state emission of (Formula presented) QD’s compared to (100) QD’s are ascribed to the effect of differing numbers, energies, and level spacings of QD confined states on intersublevel relaxation mechanisms at low-carrier excitation densities.

UR - http://www.scopus.com/inward/record.url?scp=4243244804&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.62.2737

DO - 10.1103/PhysRevB.62.2737

M3 - Article

SN - 1098-0121

VL - 62

SP - 2737

EP - 2742

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

ER -

Carrier capture and relaxation in Stranski-Krastanow quantum dots

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