Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures

Kuranananda Pemasiri; Mohammad Montazeri; Richard Gass; Leigh M. Smith; Howard E. Jackson; Jan Yarrison-Rice; Suriati Paiman; Qiang Gao; H. Hoe Tan; Chennupati Jagadish; Xin Zhang; Jin Zou

doi:10.1021/n1802997p

Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures

Kuranananda Pemasiri, Mohammad Montazeri, Richard Gass, Leigh M. Smith, Howard E. Jackson, Jan Yarrison-Rice, Suriati Paiman, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, Xin Zhang, Jin Zou

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176 Citations (Scopus)

Abstract

We use time-resolved photoluminescence from single InP nanowires containing both wurtzite (WZ) and zincblende (ZB) crystalline phases to measure the carrier dynamics of quantum confined excitons in a type-ll homostructure. The observed recombination lifetime increases by nearly 2 orders of magnitude from 170 ps for excitons above the conduction and valence band barriers to more than 8400 ps for electrons and holes that are strongly confined in quantum wells defined by monolayer-scale ZB sections in a predominantly WZ nanowire. A simple computational model, guided by detailed high-resolution transmission electron microscopy measurements from a single nanowire, demonstrates that the dynamics are consistent with the calculated distribution of confined states for the electrons and holes.

Original language	English
Pages (from-to)	648-654
Number of pages	7
Journal	Nano Letters
Volume	9
Issue number	2
DOIs	https://doi.org/10.1021/n1802997p
Publication status	Published - 11 Feb 2009

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title = "Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures",

abstract = "We use time-resolved photoluminescence from single InP nanowires containing both wurtzite (WZ) and zincblende (ZB) crystalline phases to measure the carrier dynamics of quantum confined excitons in a type-ll homostructure. The observed recombination lifetime increases by nearly 2 orders of magnitude from 170 ps for excitons above the conduction and valence band barriers to more than 8400 ps for electrons and holes that are strongly confined in quantum wells defined by monolayer-scale ZB sections in a predominantly WZ nanowire. A simple computational model, guided by detailed high-resolution transmission electron microscopy measurements from a single nanowire, demonstrates that the dynamics are consistent with the calculated distribution of confined states for the electrons and holes.",

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T1 - Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures

AU - Pemasiri, Kuranananda

AU - Montazeri, Mohammad

AU - Gass, Richard

AU - Smith, Leigh M.

AU - Jackson, Howard E.

AU - Yarrison-Rice, Jan

AU - Paiman, Suriati

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, Chennupati

AU - Zhang, Xin

AU - Zou, Jin

PY - 2009/2/11

Y1 - 2009/2/11

N2 - We use time-resolved photoluminescence from single InP nanowires containing both wurtzite (WZ) and zincblende (ZB) crystalline phases to measure the carrier dynamics of quantum confined excitons in a type-ll homostructure. The observed recombination lifetime increases by nearly 2 orders of magnitude from 170 ps for excitons above the conduction and valence band barriers to more than 8400 ps for electrons and holes that are strongly confined in quantum wells defined by monolayer-scale ZB sections in a predominantly WZ nanowire. A simple computational model, guided by detailed high-resolution transmission electron microscopy measurements from a single nanowire, demonstrates that the dynamics are consistent with the calculated distribution of confined states for the electrons and holes.

AB - We use time-resolved photoluminescence from single InP nanowires containing both wurtzite (WZ) and zincblende (ZB) crystalline phases to measure the carrier dynamics of quantum confined excitons in a type-ll homostructure. The observed recombination lifetime increases by nearly 2 orders of magnitude from 170 ps for excitons above the conduction and valence band barriers to more than 8400 ps for electrons and holes that are strongly confined in quantum wells defined by monolayer-scale ZB sections in a predominantly WZ nanowire. A simple computational model, guided by detailed high-resolution transmission electron microscopy measurements from a single nanowire, demonstrates that the dynamics are consistent with the calculated distribution of confined states for the electrons and holes.

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U2 - 10.1021/n1802997p

DO - 10.1021/n1802997p

M3 - Article

SN - 1530-6984

VL - 9

SP - 648

EP - 654

JO - Nano Letters

JF - Nano Letters

IS - 2

ER -

Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures

Abstract

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