Carrier dynamics in p-type InGaAs/GaAs quantum dots

X. M. Wen; L. V. Dao; J. A. Davis; P. Hannaford; S. Mokkapati; H. H. Tan; C. Jagadish

doi:10.1007/s10854-007-9241-5

Carrier dynamics in p-type InGaAs/GaAs quantum dots

X. M. Wen, L. V. Dao^*, J. A. Davis, P. Hannaford, S. Mokkapati, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.

Original language	English
Pages (from-to)	363-365
Number of pages	3
Journal	Journal of Materials Science: Materials in Electronics
Volume	18
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/s10854-007-9241-5
Publication status	Published - Oct 2007

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abstract = "In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.",

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AU - Wen, X. M.

AU - Dao, L. V.

AU - Davis, J. A.

AU - Hannaford, P.

AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2007/10

Y1 - 2007/10

N2 - In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.

AB - In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.

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U2 - 10.1007/s10854-007-9241-5

DO - 10.1007/s10854-007-9241-5

M3 - Article

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EP - 365

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - SUPPL. 1

ER -

Carrier dynamics in p-type InGaAs/GaAs quantum dots

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