Carrier dynamics in p-type InGaAs/GaAs quantum dots

X. M. Wen; L. V. Dao; J. A. Davis; P. Hannaford; S. Mokkapati; H. H. Tan; C. Jagadish

doi:10.1007/s10854-007-9241-5

Carrier dynamics in p-type InGaAs/GaAs quantum dots

X. M. Wen, L. V. Dao^*, J. A. Davis, P. Hannaford, S. Mokkapati, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.

Original language	English
Pages (from-to)	363-365
Number of pages	3
Journal	Journal of Materials Science: Materials in Electronics
Volume	18
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/s10854-007-9241-5
Publication status	Published - Oct 2007

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@article{f737a88a5613435bbae836e73bda903b,

title = "Carrier dynamics in p-type InGaAs/GaAs quantum dots",

abstract = "In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.",

author = "Wen, \{X. M.\} and Dao, \{L. V.\} and Davis, \{J. A.\} and P. Hannaford and S. Mokkapati and Tan, \{H. H.\} and C. Jagadish",

year = "2007",

month = oct,

doi = "10.1007/s10854-007-9241-5",

language = "English",

volume = "18",

pages = "363--365",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Carrier dynamics in p-type InGaAs/GaAs quantum dots

AU - Wen, X. M.

AU - Dao, L. V.

AU - Davis, J. A.

AU - Hannaford, P.

AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2007/10

Y1 - 2007/10

N2 - In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.

AB - In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes.

UR - https://www.scopus.com/pages/publications/34547578687

U2 - 10.1007/s10854-007-9241-5

DO - 10.1007/s10854-007-9241-5

M3 - Article

SN - 0957-4522

VL - 18

SP - 363

EP - 365

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - SUPPL. 1

ER -

Carrier dynamics in p-type InGaAs/GaAs quantum dots

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