TY - JOUR
T1 - Carrier induced degradation in compensated n-type silicon solar cells
T2 - Impact of light-intensity, forward bias voltage, and temperature on the reaction kinetics
AU - Shen, Daniel
AU - Sun, Chang
AU - Zheng, Peiting
AU - Macdonald, Daniel
AU - Rougieux, Fiacre
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/8
Y1 - 2017/8
N2 - We analyze the formation kinetics of the boron-oxygen defect in compensated n-type upgraded metallurgical-grade (UMG) silicon solar cells. Through time-resolved open-circuit voltage measurements, we explore the influence of temperature, forward bias, and light intensity on the formation kinetics of the defect. Our results confirm that the boron-oxygen defect forms more slowly in compensated n-type silicon than in p-type silicon. We present evidence which suggests that the slower kinetics in n-type silicon may be due to a lower frequency factor for defect formation.
AB - We analyze the formation kinetics of the boron-oxygen defect in compensated n-type upgraded metallurgical-grade (UMG) silicon solar cells. Through time-resolved open-circuit voltage measurements, we explore the influence of temperature, forward bias, and light intensity on the formation kinetics of the defect. Our results confirm that the boron-oxygen defect forms more slowly in compensated n-type silicon than in p-type silicon. We present evidence which suggests that the slower kinetics in n-type silicon may be due to a lower frequency factor for defect formation.
UR - http://www.scopus.com/inward/record.url?scp=85062843761&partnerID=8YFLogxK
U2 - 10.7567/JJAP.56.08MB23
DO - 10.7567/JJAP.56.08MB23
M3 - Article
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 8
M1 - 08MB23
ER -