Abstract
We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.
| Original language | English |
|---|---|
| Pages (from-to) | 3349-3353 |
| Number of pages | 5 |
| Journal | Nano Letters |
| Volume | 9 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 9 Sept 2009 |
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