Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

D. H. Macdonald; H. Maeckel; S. Doshi; W. Brendle; A. Cuevas; J. S. Williams; M. J. Conway

doi:10.1063/1.1572469

Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

D. H. Macdonald^*, H. Maeckel, S. Doshi, W. Brendle, A. Cuevas, J. S. Williams, M. J. Conway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.

Original language	English
Pages (from-to)	2987-2989
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	18
DOIs	https://doi.org/10.1063/1.1572469
Publication status	Published - 5 May 2003

Access to Document

10.1063/1.1572469

Cite this

@article{1dffe85802b44c45b95a2fae4612b197,

title = "Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon",

abstract = "The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.",

author = "Macdonald, {D. H.} and H. Maeckel and S. Doshi and W. Brendle and A. Cuevas and Williams, {J. S.} and Conway, {M. J.}",

year = "2003",

month = may,

day = "5",

doi = "10.1063/1.1572469",

language = "English",

volume = "82",

pages = "2987--2989",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

AU - Macdonald, D. H.

AU - Maeckel, H.

AU - Doshi, S.

AU - Brendle, W.

AU - Cuevas, A.

AU - Williams, J. S.

AU - Conway, M. J.

PY - 2003/5/5

Y1 - 2003/5/5

N2 - The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.

AB - The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.

UR - http://www.scopus.com/inward/record.url?scp=0038528468&partnerID=8YFLogxK

U2 - 10.1063/1.1572469

DO - 10.1063/1.1572469

M3 - Article

SN - 0003-6951

VL - 82

SP - 2987

EP - 2989

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this