Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

D. H. Macdonald; H. Maeckel; S. Doshi; W. Brendle; A. Cuevas; J. S. Williams; M. J. Conway

doi:10.1063/1.1572469

Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

D. H. Macdonald^*, H. Maeckel, S. Doshi, W. Brendle, A. Cuevas, J. S. Williams, M. J. Conway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.

Original language	English
Pages (from-to)	2987-2989
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	18
DOIs	https://doi.org/10.1063/1.1572469
Publication status	Published - 5 May 2003

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title = "Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon",

abstract = "The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.",

author = "Macdonald, \{D. H.\} and H. Maeckel and S. Doshi and W. Brendle and A. Cuevas and Williams, \{J. S.\} and Conway, \{M. J.\}",

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AU - Macdonald, D. H.

AU - Maeckel, H.

AU - Doshi, S.

AU - Brendle, W.

AU - Cuevas, A.

AU - Williams, J. S.

AU - Conway, M. J.

PY - 2003/5/5

Y1 - 2003/5/5

N2 - The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.

AB - The deeply penetrating defects in self-ion implanted silicon was studied by using carrier lifetime measurements. The implant was found to result in two distinct regions of lifetime-reducing damage. The results showed that the annealing at higher temperatures reduced the severity of both the surface and the deeply propagated defects.

UR - https://www.scopus.com/pages/publications/0038528468

U2 - 10.1063/1.1572469

DO - 10.1063/1.1572469

M3 - Article

SN - 0003-6951

VL - 82

SP - 2987

EP - 2989

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

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