Carrier transfer between V-grooved quantum wire and vertical quantum well

W. Lu; X. Q. Liu; Z. F. Li; S. C. Shen; Q. X. Zhao; Y. Fu; M. Willander; H. H. Tan; C. Jagadish; J. Zou; D. J.H. Cockayne

doi:10.1016/S0375-9601(01)00022-6

Carrier transfer between V-grooved quantum wire and vertical quantum well

W. Lu, X. Q. Liu, Z. F. Li, S. C. Shen, Q. X. Zhao^*, Y. Fu, M. Willander, H. H. Tan, C. Jagadish, J. Zou, D. J.H. Cockayne

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report the temperature dependence of the photoluminescence from our V-grooved GaAs/A1GaAs quantum wires. Based on the specially resolved luminescence results, our results show that in the processes of real space carrier transfer from the vertical quantum well region to quantum wire region, a 3.5 meV thermal activation energy has been experimentally observed in our sample. The thermal activation is attributed as the scattering process of carriers from two-dimensional states in the vertical quantum well to the one-dimensional quantum wire states. Based on numerical energy band structure analysis, a thermal activation energy of 2-9 meV is obtained theoretically, in good agreement with the experimental data.

Original language	English
Pages (from-to)	77-80
Number of pages	4
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	280
Issue number	1-2
DOIs	https://doi.org/10.1016/S0375-9601(01)00022-6
Publication status	Published - 12 Feb 2001

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title = "Carrier transfer between V-grooved quantum wire and vertical quantum well",

abstract = "We report the temperature dependence of the photoluminescence from our V-grooved GaAs/A1GaAs quantum wires. Based on the specially resolved luminescence results, our results show that in the processes of real space carrier transfer from the vertical quantum well region to quantum wire region, a 3.5 meV thermal activation energy has been experimentally observed in our sample. The thermal activation is attributed as the scattering process of carriers from two-dimensional states in the vertical quantum well to the one-dimensional quantum wire states. Based on numerical energy band structure analysis, a thermal activation energy of 2-9 meV is obtained theoretically, in good agreement with the experimental data.",

author = "W. Lu and Liu, {X. Q.} and Li, {Z. F.} and Shen, {S. C.} and Zhao, {Q. X.} and Y. Fu and M. Willander and Tan, {H. H.} and C. Jagadish and J. Zou and Cockayne, {D. J.H.}",

year = "2001",

month = feb,

day = "12",

doi = "10.1016/S0375-9601(01)00022-6",

language = "English",

volume = "280",

pages = "77--80",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Carrier transfer between V-grooved quantum wire and vertical quantum well

AU - Lu, W.

AU - Liu, X. Q.

AU - Li, Z. F.

AU - Shen, S. C.

AU - Zhao, Q. X.

AU - Fu, Y.

AU - Willander, M.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Zou, J.

AU - Cockayne, D. J.H.

PY - 2001/2/12

Y1 - 2001/2/12

N2 - We report the temperature dependence of the photoluminescence from our V-grooved GaAs/A1GaAs quantum wires. Based on the specially resolved luminescence results, our results show that in the processes of real space carrier transfer from the vertical quantum well region to quantum wire region, a 3.5 meV thermal activation energy has been experimentally observed in our sample. The thermal activation is attributed as the scattering process of carriers from two-dimensional states in the vertical quantum well to the one-dimensional quantum wire states. Based on numerical energy band structure analysis, a thermal activation energy of 2-9 meV is obtained theoretically, in good agreement with the experimental data.

AB - We report the temperature dependence of the photoluminescence from our V-grooved GaAs/A1GaAs quantum wires. Based on the specially resolved luminescence results, our results show that in the processes of real space carrier transfer from the vertical quantum well region to quantum wire region, a 3.5 meV thermal activation energy has been experimentally observed in our sample. The thermal activation is attributed as the scattering process of carriers from two-dimensional states in the vertical quantum well to the one-dimensional quantum wire states. Based on numerical energy band structure analysis, a thermal activation energy of 2-9 meV is obtained theoretically, in good agreement with the experimental data.

UR - http://www.scopus.com/inward/record.url?scp=0035847502&partnerID=8YFLogxK

U2 - 10.1016/S0375-9601(01)00022-6

DO - 10.1016/S0375-9601(01)00022-6

M3 - Article

SN - 0375-9601

VL - 280

SP - 77

EP - 80

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 1-2

ER -

Carrier transfer between V-grooved quantum wire and vertical quantum well

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