CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method

Yu Lee Kim; Jae Hun Jung; Hyun Sik Yoon; Man Suk Song; Se Hwan Bae; Yong Kim; Zhi Gang Chen; Jin Zou; Hannah J. Joyce; Qiang Gao; Hark Hoe Tan; Chennupati Jagadish

doi:10.1088/0957-4484/21/14/145602

CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method

Yu Lee Kim, Jae Hun Jung, Hyun Sik Yoon, Man Suk Song, Se Hwan Bae, Yong Kim, Zhi Gang Chen, Jin Zou, Hannah J. Joyce, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish

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18 Citations (Scopus)

Abstract

The two-dimensional heterostructure nanobelts with a central CdSe region and lateral CdS structures are synthesized by a two-step physical vapor transport method. The large growth rate difference between lateral CdS structures on both (0001) sides of the CdSe region is found. The growth anisotropy is discussed in terms of the polar nature of the side (0001) surfaces of CdSe. High-resolution transmission electron microscopy reveals the CdSe central region covered with non-uniform CdS layer/islands. From micro-photoluminescence measurements, a systematic blueshift of emission energy from the central CdSe region in accordance with the increase of lateral CdS growth temperature is observed. This result indicates that the intermixing rate in the CdSe region with CdS increases with the increase of lateral CdS growth temperature. In conventional CdSSe ternary nanostructures, morphology and emission wavelength were correlated parameters. However, the morphology and emission wavelength are independently controllable in the CdS/CdSe lateral heterostructure nanobelts. This structure is attractive for applications in visible optoelectronic devices.

Original language	English
Article number	145602
Journal	Nanotechnology
Volume	21
Issue number	14
DOIs	https://doi.org/10.1088/0957-4484/21/14/145602
Publication status	Published - 2010

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title = "CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method",

abstract = "The two-dimensional heterostructure nanobelts with a central CdSe region and lateral CdS structures are synthesized by a two-step physical vapor transport method. The large growth rate difference between lateral CdS structures on both (0001) sides of the CdSe region is found. The growth anisotropy is discussed in terms of the polar nature of the side (0001) surfaces of CdSe. High-resolution transmission electron microscopy reveals the CdSe central region covered with non-uniform CdS layer/islands. From micro-photoluminescence measurements, a systematic blueshift of emission energy from the central CdSe region in accordance with the increase of lateral CdS growth temperature is observed. This result indicates that the intermixing rate in the CdSe region with CdS increases with the increase of lateral CdS growth temperature. In conventional CdSSe ternary nanostructures, morphology and emission wavelength were correlated parameters. However, the morphology and emission wavelength are independently controllable in the CdS/CdSe lateral heterostructure nanobelts. This structure is attractive for applications in visible optoelectronic devices.",

author = "Kim, {Yu Lee} and Jung, {Jae Hun} and Yoon, {Hyun Sik} and Song, {Man Suk} and Bae, {Se Hwan} and Yong Kim and Chen, {Zhi Gang} and Jin Zou and Joyce, {Hannah J.} and Qiang Gao and Tan, {Hark Hoe} and Chennupati Jagadish",

year = "2010",

doi = "10.1088/0957-4484/21/14/145602",

language = "English",

volume = "21",

journal = "Nanotechnology",

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T1 - CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method

AU - Kim, Yu Lee

AU - Jung, Jae Hun

AU - Yoon, Hyun Sik

AU - Song, Man Suk

AU - Bae, Se Hwan

AU - Kim, Yong

AU - Chen, Zhi Gang

AU - Zou, Jin

AU - Joyce, Hannah J.

AU - Gao, Qiang

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2010

Y1 - 2010

N2 - The two-dimensional heterostructure nanobelts with a central CdSe region and lateral CdS structures are synthesized by a two-step physical vapor transport method. The large growth rate difference between lateral CdS structures on both (0001) sides of the CdSe region is found. The growth anisotropy is discussed in terms of the polar nature of the side (0001) surfaces of CdSe. High-resolution transmission electron microscopy reveals the CdSe central region covered with non-uniform CdS layer/islands. From micro-photoluminescence measurements, a systematic blueshift of emission energy from the central CdSe region in accordance with the increase of lateral CdS growth temperature is observed. This result indicates that the intermixing rate in the CdSe region with CdS increases with the increase of lateral CdS growth temperature. In conventional CdSSe ternary nanostructures, morphology and emission wavelength were correlated parameters. However, the morphology and emission wavelength are independently controllable in the CdS/CdSe lateral heterostructure nanobelts. This structure is attractive for applications in visible optoelectronic devices.

AB - The two-dimensional heterostructure nanobelts with a central CdSe region and lateral CdS structures are synthesized by a two-step physical vapor transport method. The large growth rate difference between lateral CdS structures on both (0001) sides of the CdSe region is found. The growth anisotropy is discussed in terms of the polar nature of the side (0001) surfaces of CdSe. High-resolution transmission electron microscopy reveals the CdSe central region covered with non-uniform CdS layer/islands. From micro-photoluminescence measurements, a systematic blueshift of emission energy from the central CdSe region in accordance with the increase of lateral CdS growth temperature is observed. This result indicates that the intermixing rate in the CdSe region with CdS increases with the increase of lateral CdS growth temperature. In conventional CdSSe ternary nanostructures, morphology and emission wavelength were correlated parameters. However, the morphology and emission wavelength are independently controllable in the CdS/CdSe lateral heterostructure nanobelts. This structure is attractive for applications in visible optoelectronic devices.

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DO - 10.1088/0957-4484/21/14/145602

M3 - Article

SN - 0957-4484

VL - 21

JO - Nanotechnology

JF - Nanotechnology

IS - 14

M1 - 145602

ER -

CdS/CdSe lateral heterostructure nanobelts by a two-step physical vapor transport method

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