TY - JOUR
T1 - Cellular breakdown and carrier lifetimes in gold-hyperdoped silicon
AU - Hudspeth, Quentin M.
AU - Altwerger, Mark
AU - Chow, Philippe K.
AU - Sher, Meng Ju
AU - Dissanayake, Sashini Senali
AU - Yang, Wenjie
AU - Maurer, Joshua
AU - Lim, Shao Qi
AU - Williams, James S.
AU - Efsthadiadis, Harry
AU - Warrender, Jeffrey M.
N1 - Publisher Copyright:
© 2022 IOP Publishing Ltd.
PY - 2022/12
Y1 - 2022/12
N2 - Ion implantation of transition metals into Si, followed by pulsed laser melting and rapid solidification, shows promise for making Si devices with sub-band gap optoelectronic response. We study Si implanted with Au at doses ranging from 1015-1016 at cm−2, with all but the lowest dose exhibiting interface breakdown during solidification, resulting in heavily defected layers. Terahertz photocarrier lifetime measurements confirm that layers with breakdown show recombination lifetimes of about 100 ps, compared to 800 ps for a layer with no breakdown. Device measurements, however, show more photoresponse at 1550 nm in a layer with breakdown than in a layer without. The results suggest that avoiding breakdown may be desirable but might not necessarily be imperative for making a useful device.
AB - Ion implantation of transition metals into Si, followed by pulsed laser melting and rapid solidification, shows promise for making Si devices with sub-band gap optoelectronic response. We study Si implanted with Au at doses ranging from 1015-1016 at cm−2, with all but the lowest dose exhibiting interface breakdown during solidification, resulting in heavily defected layers. Terahertz photocarrier lifetime measurements confirm that layers with breakdown show recombination lifetimes of about 100 ps, compared to 800 ps for a layer with no breakdown. Device measurements, however, show more photoresponse at 1550 nm in a layer with breakdown than in a layer without. The results suggest that avoiding breakdown may be desirable but might not necessarily be imperative for making a useful device.
KW - carrier lifetime
KW - laser hyperdoping
KW - rapid solidification
UR - http://www.scopus.com/inward/record.url?scp=85142161673&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/ac9feb
DO - 10.1088/1361-6641/ac9feb
M3 - Article
SN - 0268-1242
VL - 37
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 12
M1 - 124003
ER -