Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection

Hemi H. Gandhi; David Pastor; Tuan T. Tran; Stefan Kalchmair; Lachlan A. Smillie; Jonathan P. Mailoa; Ruggero Milazzo; Enrico Napolitani; Marko Loncar; James S. Williams; Michael J. Aziz; Eric Mazur

doi:10.1063/5.0008281

Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection

Hemi H. Gandhi^*, David Pastor^*, Tuan T. Tran, Stefan Kalchmair, Lachlan A. Smillie, Jonathan P. Mailoa, Ruggero Milazzo, Enrico Napolitani, Marko Loncar, James S. Williams, Michael J. Aziz^*, Eric Mazur^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Obtaining short-wavelength-infrared (SWIR; 1.4 μm-3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm-3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors.

Original language	English
Article number	075028
Journal	AIP Advances
Volume	10
Issue number	7
DOIs	https://doi.org/10.1063/5.0008281
Publication status	Published - 1 Jul 2020

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@article{78da81b9b63341dbaf56a59b33431363,

title = "Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection",

abstract = "Obtaining short-wavelength-infrared (SWIR; 1.4 μm-3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm-3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors.",

author = "Gandhi, {Hemi H.} and David Pastor and Tran, {Tuan T.} and Stefan Kalchmair and Smillie, {Lachlan A.} and Mailoa, {Jonathan P.} and Ruggero Milazzo and Enrico Napolitani and Marko Loncar and Williams, {James S.} and Aziz, {Michael J.} and Eric Mazur",

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year = "2020",

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doi = "10.1063/5.0008281",

language = "English",

volume = "10",

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T1 - Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection

AU - Gandhi, Hemi H.

AU - Pastor, David

AU - Tran, Tuan T.

AU - Kalchmair, Stefan

AU - Smillie, Lachlan A.

AU - Mailoa, Jonathan P.

AU - Milazzo, Ruggero

AU - Napolitani, Enrico

AU - Loncar, Marko

AU - Williams, James S.

AU - Aziz, Michael J.

AU - Mazur, Eric

PY - 2020/7/1

Y1 - 2020/7/1

N2 - Obtaining short-wavelength-infrared (SWIR; 1.4 μm-3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm-3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors.

AB - Obtaining short-wavelength-infrared (SWIR; 1.4 μm-3.0 μm) room-temperature photodetection in a low-cost, group IV semiconductor is desirable for numerous applications. We demonstrate a non-equilibrium method for hyperdoping germanium with selenium or tellurium for dopant-mediated SWIR photodetection. By ion-implanting Se or Te into Ge wafers and restoring crystallinity with pulsed laser melting induced rapid solidification, we obtain single crystalline materials with peak Se and Te concentrations of 1020 cm-3 (104 times the solubility limits). These hyperdoped materials exhibit sub-bandgap absorption of light up to wavelengths of at least 3.0 μm, with their sub-bandgap optical absorption coefficients comparable to those of commercial SWIR photodetection materials. Although previous studies of Ge-based photodetectors have reported a sub-bandgap optoelectronic response only at low temperature, we report room-temperature sub-bandgap SWIR photodetection at wavelengths as long as 3.0 μm from rudimentary hyperdoped Ge:Se and Ge:Te photodetectors.

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U2 - 10.1063/5.0008281

DO - 10.1063/5.0008281

M3 - Article

SN - 2158-3226

VL - 10

JO - AIP Advances

JF - AIP Advances

IS - 7

M1 - 075028

ER -

Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection

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