Channel waveguides formed by germanium implantation in fused silica

P. W. Leech; M. Faith; P. C. Kemeny; M. C. Ridgway; R. G. Elliman; G. K. Reeves; W. Zhou

doi:10.1016/0168-583X(95)00749-0

Channel waveguides formed by germanium implantation in fused silica

P. W. Leech^*, M. Faith, P. C. Kemeny, M. C. Ridgway, R. G. Elliman, G. K. Reeves, W. Zhou

^*Corresponding author for this work

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Abstract

Low loss, single mode waveguides in fused silica have been formed by implantation with 5 MeV Ge ions. The implanted region was characterized by an increase in refractive index of ∼ 1.1%. The distribution of Ge as a function of depth showed a peak concentration of 3.9 mole % at a dose of 8 × 10¹⁶ Ge/cm². This concentration profile of Ge was thermally stable to a temperature of ≥ 850°C. For doses in the range of 8 × 10¹⁴-8 × 10¹⁵ Ge/cm², the loss coefficient, α, was 1.0 dB/cm for the as-implanted waveguides and 0.10-0.15 dB/cm following annealing at 500°C measured at a wavelength of 1.3 μm.

Original language	English
Pages (from-to)	442-446
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	106
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(95)00749-0
Publication status	Published - 2 Dec 1995

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title = "Channel waveguides formed by germanium implantation in fused silica",

abstract = "Low loss, single mode waveguides in fused silica have been formed by implantation with 5 MeV Ge ions. The implanted region was characterized by an increase in refractive index of ∼ 1.1%. The distribution of Ge as a function of depth showed a peak concentration of 3.9 mole % at a dose of 8 × 1016 Ge/cm2. This concentration profile of Ge was thermally stable to a temperature of ≥ 850°C. For doses in the range of 8 × 1014-8 × 1015 Ge/cm2, the loss coefficient, α, was 1.0 dB/cm for the as-implanted waveguides and 0.10-0.15 dB/cm following annealing at 500°C measured at a wavelength of 1.3 μm.",

author = "Leech, {P. W.} and M. Faith and Kemeny, {P. C.} and Ridgway, {M. C.} and Elliman, {R. G.} and Reeves, {G. K.} and W. Zhou",

year = "1995",

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doi = "10.1016/0168-583X(95)00749-0",

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T1 - Channel waveguides formed by germanium implantation in fused silica

AU - Leech, P. W.

AU - Faith, M.

AU - Kemeny, P. C.

AU - Ridgway, M. C.

AU - Elliman, R. G.

AU - Reeves, G. K.

AU - Zhou, W.

PY - 1995/12/2

Y1 - 1995/12/2

N2 - Low loss, single mode waveguides in fused silica have been formed by implantation with 5 MeV Ge ions. The implanted region was characterized by an increase in refractive index of ∼ 1.1%. The distribution of Ge as a function of depth showed a peak concentration of 3.9 mole % at a dose of 8 × 1016 Ge/cm2. This concentration profile of Ge was thermally stable to a temperature of ≥ 850°C. For doses in the range of 8 × 1014-8 × 1015 Ge/cm2, the loss coefficient, α, was 1.0 dB/cm for the as-implanted waveguides and 0.10-0.15 dB/cm following annealing at 500°C measured at a wavelength of 1.3 μm.

AB - Low loss, single mode waveguides in fused silica have been formed by implantation with 5 MeV Ge ions. The implanted region was characterized by an increase in refractive index of ∼ 1.1%. The distribution of Ge as a function of depth showed a peak concentration of 3.9 mole % at a dose of 8 × 1016 Ge/cm2. This concentration profile of Ge was thermally stable to a temperature of ≥ 850°C. For doses in the range of 8 × 1014-8 × 1015 Ge/cm2, the loss coefficient, α, was 1.0 dB/cm for the as-implanted waveguides and 0.10-0.15 dB/cm following annealing at 500°C measured at a wavelength of 1.3 μm.

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DO - 10.1016/0168-583X(95)00749-0

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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ER -

Channel waveguides formed by germanium implantation in fused silica

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