Channeling measurements of ion implantation damage in 4H-SiC

A. Yu Kuznetsov*, M. S. Janson, A. Hallén, B. G. Svensson, C. Jagadish, H. Grünleitner, G. Pensl

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    Rutherford backscattering spectrometry in the channelling mode using MeV He+ ion beam is employed to measure 100 keV Al+ and 450 keV Xe+ ion implantation damage profiles in 4H-SiC as a function of implantation temperature and dose. The dechanneled fraction in the silicon sublattice has been evaluated and profiles of disordered silicon atoms are extracted from the measurements. Strong surface accumulation of disordered silicon atoms is observed. In addition it is found that the number of displaced silicon atoms normalized by the dose for 5×1014 and 1×1015 Al+/cm2 implants follows an Arrhenius dependence in the temperature range of 25-400°C and a preliminary value for the activation energy is in the range of 0.1 eV.

    Original languageEnglish
    Pages (from-to)595-598
    Number of pages4
    JournalMaterials Science Forum
    Volume353-356
    DOIs
    Publication statusPublished - 2001

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