Characterisation of InGaAs/GaAs quantum dot lasers grown by metal-organic vapour phase epitaxy

Penelope Lever*, Zo Lowrie-Nunes, Manuela Buda, Hark Hoe Tan, Chennupati Jagadish

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    A major problem facing quantum dot lasers is gain saturation. This is caused by low gain volume and also a low wavefunction overlap within the quantum dots. One method to increase the gain volume is to increase the number of layers of quantum dots. This paper compares the characteristics of lasers with three and five layers of quantum dots. It is shown that five layer devices can be made with improved efficiency and wavelength characteristics without a significant increase in the losses.

    Original languageEnglish
    Title of host publicationCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
    Pages277-279
    Number of pages3
    DOIs
    Publication statusPublished - 2005
    EventCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia
    Duration: 8 Dec 200410 Dec 2004

    Publication series

    NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

    Conference

    ConferenceCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
    Country/TerritoryAustralia
    CityBribane, QLD
    Period8/12/0410/12/04

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