Characterisation of ion-implantation-induced disorder in GaAs by EXAFS

Christopher Glover, Kin Man Yu, Mark C Ridgway, Garry J Foran

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	548-551
Journal	Japanese Journal of Applied Physics
Volume	38
Issue number	38-1
Publication status	Published - 1999

Cite this

@article{99bcbae3ff2144e6a100b1a24c5c68da,

title = "Characterisation of ion-implantation-induced disorder in GaAs by EXAFS",

author = "Christopher Glover and Yu, {Kin Man} and Ridgway, {Mark C} and Foran, {Garry J}",

year = "1999",

language = "English",

volume = "38",

pages = "548--551",

journal = "Japanese Journal of Applied Physics",

publisher = "Japan Society of Applied Physics",

number = "38-1",

}