Characterisation of MeV neon damage in silicon

R. G. Elliman; J. S. Williams; S. T. Johnson; A. P. Pogany

doi:10.1016/0168-583X(86)90340-X

Characterisation of MeV neon damage in silicon

R. G. Elliman^*, J. S. Williams, S. T. Johnson, A. P. Pogany

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Ion backscattering (RBS)/channeling and transmission electron microscopy (TEM) have been combined to characterise the radiation damage produced in crystalline silicon during irradiation with 1.5 MeV Ne⁺. The resulting damage structures and distributions are found to be a sensitive function of substrate temperature. In particular, for temperatures between 20 and 300°C the disorder is found to increase gradually from the surface to a peak at the projected ion range, whereas, for temperatures greater than 300°C the disorder is observed to have a very distinctive distribution, consisting of a narrow band of extended defects at the projected ion range but with the surface region essentially defect free to depths of ~ 1.4 μm. This latter structure has been employed to obtain an accurate measure of the channeled to random stopping power ratio (0.53 ± 0.05) for 3 MeV He⁺ incident along a 〈001〉 silicon axial direction.

Original language	English
Pages (from-to)	439-442
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	15
Issue number	1-6
DOIs	https://doi.org/10.1016/0168-583X(86)90340-X
Publication status	Published - 1 Apr 1986
Externally published	Yes

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title = "Characterisation of MeV neon damage in silicon",

abstract = "Ion backscattering (RBS)/channeling and transmission electron microscopy (TEM) have been combined to characterise the radiation damage produced in crystalline silicon during irradiation with 1.5 MeV Ne+. The resulting damage structures and distributions are found to be a sensitive function of substrate temperature. In particular, for temperatures between 20 and 300°C the disorder is found to increase gradually from the surface to a peak at the projected ion range, whereas, for temperatures greater than 300°C the disorder is observed to have a very distinctive distribution, consisting of a narrow band of extended defects at the projected ion range but with the surface region essentially defect free to depths of ~ 1.4 μm. This latter structure has been employed to obtain an accurate measure of the channeled to random stopping power ratio (0.53 ± 0.05) for 3 MeV He+ incident along a 〈001〉 silicon axial direction.",

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T1 - Characterisation of MeV neon damage in silicon

AU - Elliman, R. G.

AU - Williams, J. S.

AU - Johnson, S. T.

AU - Pogany, A. P.

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Y1 - 1986/4/1

N2 - Ion backscattering (RBS)/channeling and transmission electron microscopy (TEM) have been combined to characterise the radiation damage produced in crystalline silicon during irradiation with 1.5 MeV Ne+. The resulting damage structures and distributions are found to be a sensitive function of substrate temperature. In particular, for temperatures between 20 and 300°C the disorder is found to increase gradually from the surface to a peak at the projected ion range, whereas, for temperatures greater than 300°C the disorder is observed to have a very distinctive distribution, consisting of a narrow band of extended defects at the projected ion range but with the surface region essentially defect free to depths of ~ 1.4 μm. This latter structure has been employed to obtain an accurate measure of the channeled to random stopping power ratio (0.53 ± 0.05) for 3 MeV He+ incident along a 〈001〉 silicon axial direction.

AB - Ion backscattering (RBS)/channeling and transmission electron microscopy (TEM) have been combined to characterise the radiation damage produced in crystalline silicon during irradiation with 1.5 MeV Ne+. The resulting damage structures and distributions are found to be a sensitive function of substrate temperature. In particular, for temperatures between 20 and 300°C the disorder is found to increase gradually from the surface to a peak at the projected ion range, whereas, for temperatures greater than 300°C the disorder is observed to have a very distinctive distribution, consisting of a narrow band of extended defects at the projected ion range but with the surface region essentially defect free to depths of ~ 1.4 μm. This latter structure has been employed to obtain an accurate measure of the channeled to random stopping power ratio (0.53 ± 0.05) for 3 MeV He+ incident along a 〈001〉 silicon axial direction.

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JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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Characterisation of MeV neon damage in silicon

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