@inproceedings{50315997db2e488697d01c161f532f99,
title = "Characterisation of nitrogen-related defects in compound semiconductors by near-edge x-ray absorption fine structure",
abstract = "We have studied the formation of nitrogen-related defects created in compound semiconductors by low-energy ion bombardment (0.3-5 keV N 2+ or Ar+) using near-edge x-ray absorption fine structure (NEXAFS) around the N K-edge. Nitrogen interstitials and antisites have been identified in NEXAFS spectra of InN and GaN in full agreement with theoretical calculations. Several defect levels within the band gap and the conduction band of GaN and InN were clearly resolved in NEXAFS spectra. We attribute these levels to interstitial and antisite nitrogen in good agreement with theoretical calculations. Interstitial molecular nitrogen, N2, has been observed in all samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high-resolution measurements.",
keywords = "Inn, gan, insb, gasb, gaas, zno, Low- Energy ion bombardment, Molecular nitrogen, NEXAFS, Nitrogen antisites, Nitrogen interstitials",
author = "Mladen Petravic and Zlatko Majlinger and Ana Bozanic and Yang, {Yaw Wen} and Michael Gao and CCrotti",
year = "2008",
doi = "10.1109/COMMAD.2008.4802100",
language = "English",
isbn = "9781424427178",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
pages = "98--100",
booktitle = "Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08",
note = "2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 ; Conference date: 28-07-2008 Through 01-08-2008",
}