@inproceedings{e5acb02ffac648ceabc7f0d01efc76e3,
title = "Characterisation of sputtering deposited amorphous silicon films for silicon heterojunction solar cells",
abstract = "This work investigates intrinsic and doped amorphous silicon films deposited by RF sputtering. The correlation between surface passivation and the a-Si:H film properties are explored. It has been found that the passivation depends on both the incorporated hydrogen concentration and the bonding configuration. Furthermore, conductivity measurement are performed on the doped a-Si:H by sputtering for the first time. It has been confirmed that p and n-type doping can be achieved by using boron or phosphorus doped Si targets. However, further work on dopant activation is required to achieve the higher doping levels necessary for high efficiency devices.",
keywords = "amorphous silicon, heterojunction, sputtering, surface passivation",
author = "Xinyu Zhang and Andres Cuevas and James Bullock",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",
year = "2016",
month = nov,
day = "18",
doi = "10.1109/PVSC.2016.7749411",
language = "English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "73--76",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
address = "United States",
}