Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

F. E. Rougieux; D. MacDonald; K. R. McIntosh; A. Cuevas

doi:10.1088/0268-1242/25/5/055009

Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

F. E. Rougieux, D. MacDonald, K. R. McIntosh, A. Cuevas

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2 Citations (Scopus)

Abstract

We report on the formation of a lightly doped p-n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion mass spectrometry and hot probe measurements. For the first time the impact of the unexpected junction on the characterization of metal-oxide-semiconductor structures with capacitance-voltage measurements is measured and explained via simulation.

Original language	English
Article number	055009
Journal	Semiconductor Science and Technology
Volume	25
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/25/5/055009
Publication status	Published - 2010

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title = "Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon",

abstract = "We report on the formation of a lightly doped p-n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion mass spectrometry and hot probe measurements. For the first time the impact of the unexpected junction on the characterization of metal-oxide-semiconductor structures with capacitance-voltage measurements is measured and explained via simulation.",

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AU - McIntosh, K. R.

AU - Cuevas, A.

PY - 2010

Y1 - 2010

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AB - We report on the formation of a lightly doped p-n junction at the surface of compensated p-type silicon wafers, caused by dopant segregation during thermal oxidation. Experimental evidence and characterization of the junction is obtained by secondary ion mass spectrometry and hot probe measurements. For the first time the impact of the unexpected junction on the characterization of metal-oxide-semiconductor structures with capacitance-voltage measurements is measured and explained via simulation.

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DO - 10.1088/0268-1242/25/5/055009

M3 - Article

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VL - 25

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

Abstract

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