Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot lasers

P. Lever; M. Buda; H. H. Tan; C. Jagadish

doi:10.1109/LPT.2004.836351

Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot lasers

P. Lever^*, M. Buda, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices.

Original language	English
Pages (from-to)	2589-2591
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2004.836351
Publication status	Published - Dec 2004

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abstract = "Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices.",

keywords = "InGaAs, Quantum dot (QD), Semiconductor laser",

author = "P. Lever and M. Buda and Tan, {H. H.} and C. Jagadish",

year = "2004",

month = dec,

doi = "10.1109/LPT.2004.836351",

language = "English",

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journal = "IEEE Photonics Technology Letters",

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AU - Lever, P.

AU - Buda, M.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2004/12

Y1 - 2004/12

N2 - Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices.

AB - Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices.

KW - InGaAs

KW - Quantum dot (QD)

KW - Semiconductor laser

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U2 - 10.1109/LPT.2004.836351

DO - 10.1109/LPT.2004.836351

M3 - Article

SN - 1041-1135

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SP - 2589

EP - 2591

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot lasers

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