Characteristics of ZnO film grown by MOCVD

Xinqiang Wang; Shuren Yang; Jinzhong Wang; H. C. Ong; Jingzhi Yin; Zongyou Yin; Mingtao Li; Guotong Du

doi:10.1117/12.444994

Characteristics of ZnO film grown by MOCVD

Xinqiang Wang, Shuren Yang, Jinzhong Wang, H. C. Ong, Jingzhi Yin, Zongyou Yin, Mingtao Li, Guotong Du

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Abstract

In this paper, we deposited high quality ZnO film by plasma-assisted Metal-organic Chemical Vapor Deposition (MOCVD). A dominant peak at 34.6° due to (002) ZnO was observed indicating strongly C-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.56° showing relatively small mosaicity. Transmission spectrum showed that the bandgap of ZnO film was about 3.31 eV at room temperature. Photoluminescence (PL) measurement was performed at both room temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. The resistivity of ZnO film was increased after annealing under O₂ while its optical quality decreased.

Original language	English
Pages (from-to)	445-448
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4580
DOIs	https://doi.org/10.1117/12.444994
Publication status	Published - 2001
Externally published	Yes

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title = "Characteristics of ZnO film grown by MOCVD",

abstract = "In this paper, we deposited high quality ZnO film by plasma-assisted Metal-organic Chemical Vapor Deposition (MOCVD). A dominant peak at 34.6° due to (002) ZnO was observed indicating strongly C-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.56° showing relatively small mosaicity. Transmission spectrum showed that the bandgap of ZnO film was about 3.31 eV at room temperature. Photoluminescence (PL) measurement was performed at both room temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. The resistivity of ZnO film was increased after annealing under O2 while its optical quality decreased.",

keywords = "MOCVD, Photoluminescence, Transmission spectrum, Ultraviolet, ZnO",

author = "Xinqiang Wang and Shuren Yang and Jinzhong Wang and Ong, {H. C.} and Jingzhi Yin and Zongyou Yin and Mingtao Li and Guotong Du",

year = "2001",

doi = "10.1117/12.444994",

language = "English",

volume = "4580",

pages = "445--448",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - JOUR

T1 - Characteristics of ZnO film grown by MOCVD

AU - Wang, Xinqiang

AU - Yang, Shuren

AU - Wang, Jinzhong

AU - Ong, H. C.

AU - Yin, Jingzhi

AU - Yin, Zongyou

AU - Li, Mingtao

AU - Du, Guotong

PY - 2001

Y1 - 2001

N2 - In this paper, we deposited high quality ZnO film by plasma-assisted Metal-organic Chemical Vapor Deposition (MOCVD). A dominant peak at 34.6° due to (002) ZnO was observed indicating strongly C-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.56° showing relatively small mosaicity. Transmission spectrum showed that the bandgap of ZnO film was about 3.31 eV at room temperature. Photoluminescence (PL) measurement was performed at both room temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. The resistivity of ZnO film was increased after annealing under O2 while its optical quality decreased.

AB - In this paper, we deposited high quality ZnO film by plasma-assisted Metal-organic Chemical Vapor Deposition (MOCVD). A dominant peak at 34.6° due to (002) ZnO was observed indicating strongly C-oriented. The full-width at half-maximum (FWHM) of the ω-rocking curve was 0.56° showing relatively small mosaicity. Transmission spectrum showed that the bandgap of ZnO film was about 3.31 eV at room temperature. Photoluminescence (PL) measurement was performed at both room temperature. Ultraviolet (UV) emission at 3.30 eV was found with high intensity at room temperature while the deep level transition was weakly observed at 2.513 eV. The ratio of the intensity of UV emission to that of deep level emission was as high as 193, which implied high quality of ZnO film. The resistivity of ZnO film was increased after annealing under O2 while its optical quality decreased.

KW - MOCVD

KW - Photoluminescence

KW - Transmission spectrum

KW - Ultraviolet

KW - ZnO

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U2 - 10.1117/12.444994

DO - 10.1117/12.444994

M3 - Article

SN - 0277-786X

VL - 4580

SP - 445

EP - 448

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Characteristics of ZnO film grown by MOCVD

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