TY - GEN
T1 - Characterization of boron surface doping effects on PECVD silicon nitride passivation
AU - Nursam, N. M.
AU - Weber, K. J.
AU - Ren, Y.
PY - 2010
Y1 - 2010
N2 - In this paper, we investigate the dependence of surface recombination of B diffused and undiffused PECVD SiNx passivated emitters on the net electrostatic charge density. We show that the application of positive surface charge results in a significant increase in the surface recombination of PECVD SiNx passivated B diffused emitters, even for high B surface concentrations. On the other hand, negative charge causes a substantial reduction in surface recombination. Under accumulation conditions, the significant difference observed in J0e between B diffused and undiffused samples implies that the B diffusion has resulted in some degradation of the Si-PECVD SiNx interface. The results of J0e under accumulation for samples with different B surface concentrations and sheet resistances suggest that the interface degradation is not a strong function of the B surface concentration or the surface orientation.
AB - In this paper, we investigate the dependence of surface recombination of B diffused and undiffused PECVD SiNx passivated emitters on the net electrostatic charge density. We show that the application of positive surface charge results in a significant increase in the surface recombination of PECVD SiNx passivated B diffused emitters, even for high B surface concentrations. On the other hand, negative charge causes a substantial reduction in surface recombination. Under accumulation conditions, the significant difference observed in J0e between B diffused and undiffused samples implies that the B diffusion has resulted in some degradation of the Si-PECVD SiNx interface. The results of J0e under accumulation for samples with different B surface concentrations and sheet resistances suggest that the interface degradation is not a strong function of the B surface concentration or the surface orientation.
UR - http://www.scopus.com/inward/record.url?scp=78650148502&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5616740
DO - 10.1109/PVSC.2010.5616740
M3 - Conference contribution
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3214
EP - 3219
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -