Characterization of deep level traps responsible for isolation of proton implanted GaAs

H. Boudinov; A. V.P. Coelho; H. H. Tan; C. Jagadish

doi:10.1063/1.1554761

Characterization of deep level traps responsible for isolation of proton implanted GaAs

H. Boudinov^*, A. V.P. Coelho, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs were determined. The deep level transient spectroscopy was used in the analysis. The thermal stability of these defects was also investigated. It was found that some traps were detected in proton irradiated GaAs, which were not presented in electron irradiated GaAs.

Original language	English
Pages (from-to)	3234-3238
Number of pages	5
Journal	Journal of Applied Physics
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.1554761
Publication status	Published - 15 Mar 2003

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title = "Characterization of deep level traps responsible for isolation of proton implanted GaAs",

abstract = "The electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs were determined. The deep level transient spectroscopy was used in the analysis. The thermal stability of these defects was also investigated. It was found that some traps were detected in proton irradiated GaAs, which were not presented in electron irradiated GaAs.",

author = "H. Boudinov and Coelho, {A. V.P.} and Tan, {H. H.} and C. Jagadish",

year = "2003",

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T1 - Characterization of deep level traps responsible for isolation of proton implanted GaAs

AU - Boudinov, H.

AU - Coelho, A. V.P.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2003/3/15

Y1 - 2003/3/15

N2 - The electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs were determined. The deep level transient spectroscopy was used in the analysis. The thermal stability of these defects was also investigated. It was found that some traps were detected in proton irradiated GaAs, which were not presented in electron irradiated GaAs.

AB - The electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs were determined. The deep level transient spectroscopy was used in the analysis. The thermal stability of these defects was also investigated. It was found that some traps were detected in proton irradiated GaAs, which were not presented in electron irradiated GaAs.

UR - http://www.scopus.com/inward/record.url?scp=0037444842&partnerID=8YFLogxK

U2 - 10.1063/1.1554761

DO - 10.1063/1.1554761

M3 - Article

SN - 0021-8979

VL - 93

SP - 3234

EP - 3238

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Characterization of deep level traps responsible for isolation of proton implanted GaAs

Abstract

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