Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Cloud Nyamhere; P. N.K. Deenapanray; F. D. Auret; F. C. Farlow

doi:10.1016/j.physb.2005.12.043

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Cloud Nyamhere^*, P. N.K. Deenapanray, F. D. Auret, F. C. Farlow

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.

Original language	English
Pages (from-to)	161-164
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.043
Publication status	Published - 1 Apr 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 24 Jul 2005 → 29 Jul 2005

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@article{8591b4ff08e94e7fabe280b526b3ae6c,

title = "Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS",

abstract = "We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.",

keywords = "Czochralski Si, Defects, Gallium doping, Laplace DLTS",

author = "Cloud Nyamhere and Deenapanray, \{P. N.K.\} and Auret, \{F. D.\} and Farlow, \{F. C.\}",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.043",

language = "English",

volume = "376-377",

pages = "161--164",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

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TY - JOUR

T1 - Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

AU - Nyamhere, Cloud

AU - Deenapanray, P. N.K.

AU - Auret, F. D.

AU - Farlow, F. C.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.

AB - We have measured the electrical and annealing properties of defects created in epitaxial and Czochralski-grown Si doped with either B or Ga by electron irradiation using both conventional and Laplace deep level transient spectroscopy (L)-DLTS. With L-DLTS, we have been able to resolve several defects that cannot be resolved using conventional DLTS. L-DLTS provides a new avenue to study defect introduction rates and annealing kinetics in B- and Ga-doped Si. The isochronal annealing behaviour of the defects was also investigated.

KW - Czochralski Si

KW - Defects

KW - Gallium doping

KW - Laplace DLTS

UR - https://www.scopus.com/pages/publications/33645232762

U2 - 10.1016/j.physb.2005.12.043

DO - 10.1016/j.physb.2005.12.043

M3 - Conference article

SN - 0921-4526

VL - 376-377

SP - 161

EP - 164

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

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