TY - JOUR
T1 - Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films
AU - Mota-Santiago, P.
AU - Schauries, D.
AU - Nadzri, A.
AU - Vora, K.
AU - Ridgway, M. C.
AU - Kluth, P.
N1 - Publisher Copyright:
© Owned by the authors, published by EDP Sciences, 2015.
PY - 2015/4/6
Y1 - 2015/4/6
N2 - Amorphous silicon oxynitride (SiOxNy) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 μm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au13+ ions. The samples were studied using spectral reflectometry and Rutherford backscattering spectrometry (RBS), with the track morphology characterised by means of small angle X-ray scattering (SAXS). The radial density of the ion tracks resembles a core-shell structure with a typical radius of ∼ 1.8 + 2.4 nm in the case of Si3N4 and 2.3 + 3.2 nm for SiO2.
AB - Amorphous silicon oxynitride (SiOxNy) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 μm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au13+ ions. The samples were studied using spectral reflectometry and Rutherford backscattering spectrometry (RBS), with the track morphology characterised by means of small angle X-ray scattering (SAXS). The radial density of the ion tracks resembles a core-shell structure with a typical radius of ∼ 1.8 + 2.4 nm in the case of Si3N4 and 2.3 + 3.2 nm for SiO2.
UR - http://www.scopus.com/inward/record.url?scp=84927657273&partnerID=8YFLogxK
U2 - 10.1051/epjconf/20159100008
DO - 10.1051/epjconf/20159100008
M3 - Conference article
AN - SCOPUS:84927657273
SN - 2101-6275
VL - 91
JO - EPJ Web of Conferences
JF - EPJ Web of Conferences
M1 - 00008
T2 - Heavy-Ion Accelerator Symposium, HIAS 2014
Y2 - 30 June 2014 through 2 July 2014
ER -