Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films

P. Mota-Santiago; D. Schauries; A. Nadzri; K. Vora; M. C. Ridgway; P. Kluth

doi:10.1051/epjconf/20159100008

Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films

P. Mota-Santiago
, D. Schauries
, A. Nadzri
, K. Vora
, M. C. Ridgway
, P. Kluth

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

Amorphous silicon oxynitride (SiO_xN_y) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 μm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au¹³⁺ ions. The samples were studied using spectral reflectometry and Rutherford backscattering spectrometry (RBS), with the track morphology characterised by means of small angle X-ray scattering (SAXS). The radial density of the ion tracks resembles a core-shell structure with a typical radius of ∼ 1.8 + 2.4 nm in the case of Si₃N₄ and 2.3 + 3.2 nm for SiO₂.

Original language	English
Article number	00008
Journal	EPJ Web of Conferences
Volume	91
DOIs	https://doi.org/10.1051/epjconf/20159100008
Publication status	Published - 6 Apr 2015
Event	Heavy-Ion Accelerator Symposium, HIAS 2014 - Canberra, Australia Duration: 30 Jun 2014 → 2 Jul 2014

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title = "Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films",

abstract = "Amorphous silicon oxynitride (SiOxNy) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 μm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au13+ ions. The samples were studied using spectral reflectometry and Rutherford backscattering spectrometry (RBS), with the track morphology characterised by means of small angle X-ray scattering (SAXS). The radial density of the ion tracks resembles a core-shell structure with a typical radius of ∼ 1.8 + 2.4 nm in the case of Si3N4 and 2.3 + 3.2 nm for SiO2.",

author = "P. Mota-Santiago and D. Schauries and A. Nadzri and K. Vora and Ridgway, \{M. C.\} and P. Kluth",

note = "Publisher Copyright: {\textcopyright} Owned by the authors, published by EDP Sciences, 2015.; Heavy-Ion Accelerator Symposium, HIAS 2014 ; Conference date: 30-06-2014 Through 02-07-2014",

year = "2015",

month = apr,

day = "6",

doi = "10.1051/epjconf/20159100008",

language = "English",

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TY - JOUR

T1 - Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films

AU - Mota-Santiago, P.

AU - Schauries, D.

AU - Nadzri, A.

AU - Vora, K.

AU - Ridgway, M. C.

AU - Kluth, P.

N1 - Publisher Copyright: © Owned by the authors, published by EDP Sciences, 2015.

PY - 2015/4/6

Y1 - 2015/4/6

N2 - Amorphous silicon oxynitride (SiOxNy) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 μm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au13+ ions. The samples were studied using spectral reflectometry and Rutherford backscattering spectrometry (RBS), with the track morphology characterised by means of small angle X-ray scattering (SAXS). The radial density of the ion tracks resembles a core-shell structure with a typical radius of ∼ 1.8 + 2.4 nm in the case of Si3N4 and 2.3 + 3.2 nm for SiO2.

AB - Amorphous silicon oxynitride (SiOxNy) possess interesting optical and mechanical properties. Here, we present direct evidence for the formation of ion tracks in 1 μm thick silicon oxynitride of different stoichiometries. The tracks were created by irradiation with 185 MeV Au13+ ions. The samples were studied using spectral reflectometry and Rutherford backscattering spectrometry (RBS), with the track morphology characterised by means of small angle X-ray scattering (SAXS). The radial density of the ion tracks resembles a core-shell structure with a typical radius of ∼ 1.8 + 2.4 nm in the case of Si3N4 and 2.3 + 3.2 nm for SiO2.

UR - https://www.scopus.com/pages/publications/84927657273

U2 - 10.1051/epjconf/20159100008

DO - 10.1051/epjconf/20159100008

M3 - Conference article

AN - SCOPUS:84927657273

SN - 2101-6275

VL - 91

JO - EPJ Web of Conferences

JF - EPJ Web of Conferences

M1 - 00008

T2 - Heavy-Ion Accelerator Symposium, HIAS 2014

Y2 - 30 June 2014 through 2 July 2014

ER -

Characterization of ion track morphology formed by swift heavy ion irradiation in silicon oxynitride films

Abstract

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