Characterization of low-temperature PECVD silicon dioxide films

P. N.K. Deenapanray; J. Lengyel; H. H. Tan; M. Petravic; A. Durandet; J. S. Williams; C. Jagadish

doi:10.1557/PROC-555-197

Characterization of low-temperature PECVD silicon dioxide films

P. N.K. Deenapanray^*, J. Lengyel, H. H. Tan, M. Petravic, A. Durandet, J. S. Williams, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Silicon dioxide (SiO_x, x ≤ 2) films were plasma-deposited at a pressure of 1 Torr and low substrate temperature (≤ 300°C) by N₂O/SiH₄ flow. Deposition rates in the range 20-50 nm/min were achieved at 20 W rf source power. Deep level transient spectroscopy showed that no significant defect levels were introduced in the Si substrates at this low source power. The effects of flowrate ratio, R, of N₂O/SiH₄ and substrate temperature on film properties were determined using ex-situ spectroscopic ellipsometry, prism coupler, Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR) and chemical etching (P-etch). Near-stoichiometric oxide layers were obtained for R ≥ 1, and a decrease in deposition rate with increasing R was observed. The increase in refractive index for R ≤ 1 has been correlated to compositional changes in the thin films. Complementary results were obtained from FTIR and P-etch measurements. Nitrogen was present in the films deposited using R = 4.4, for which the deposition rate showed an Arrhenius-like relationship to substrate temperature. No OH-related bands were observed in our films.

Original language	English
Pages (from-to)	197-202
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	555
DOIs	https://doi.org/10.1557/PROC-555-197
Publication status	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: 30 Nov 1998 → 3 Dec 1998

Access to Document

10.1557/PROC-555-197

Cite this

@article{633b6a9a20e9410892f26050e93e8b95,

title = "Characterization of low-temperature PECVD silicon dioxide films",

abstract = "Silicon dioxide (SiOx, x ≤ 2) films were plasma-deposited at a pressure of 1 Torr and low substrate temperature (≤ 300°C) by N2O/SiH4 flow. Deposition rates in the range 20-50 nm/min were achieved at 20 W rf source power. Deep level transient spectroscopy showed that no significant defect levels were introduced in the Si substrates at this low source power. The effects of flowrate ratio, R, of N2O/SiH4 and substrate temperature on film properties were determined using ex-situ spectroscopic ellipsometry, prism coupler, Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR) and chemical etching (P-etch). Near-stoichiometric oxide layers were obtained for R ≥ 1, and a decrease in deposition rate with increasing R was observed. The increase in refractive index for R ≤ 1 has been correlated to compositional changes in the thin films. Complementary results were obtained from FTIR and P-etch measurements. Nitrogen was present in the films deposited using R = 4.4, for which the deposition rate showed an Arrhenius-like relationship to substrate temperature. No OH-related bands were observed in our films.",

author = "Deenapanray, {P. N.K.} and J. Lengyel and Tan, {H. H.} and M. Petravic and A. Durandet and Williams, {J. S.} and C. Jagadish",

year = "1999",

doi = "10.1557/PROC-555-197",

language = "English",

volume = "555",

pages = "197--202",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

}

TY - JOUR

T1 - Characterization of low-temperature PECVD silicon dioxide films

AU - Deenapanray, P. N.K.

AU - Lengyel, J.

AU - Tan, H. H.

AU - Petravic, M.

AU - Durandet, A.

AU - Williams, J. S.

AU - Jagadish, C.

PY - 1999

Y1 - 1999

N2 - Silicon dioxide (SiOx, x ≤ 2) films were plasma-deposited at a pressure of 1 Torr and low substrate temperature (≤ 300°C) by N2O/SiH4 flow. Deposition rates in the range 20-50 nm/min were achieved at 20 W rf source power. Deep level transient spectroscopy showed that no significant defect levels were introduced in the Si substrates at this low source power. The effects of flowrate ratio, R, of N2O/SiH4 and substrate temperature on film properties were determined using ex-situ spectroscopic ellipsometry, prism coupler, Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR) and chemical etching (P-etch). Near-stoichiometric oxide layers were obtained for R ≥ 1, and a decrease in deposition rate with increasing R was observed. The increase in refractive index for R ≤ 1 has been correlated to compositional changes in the thin films. Complementary results were obtained from FTIR and P-etch measurements. Nitrogen was present in the films deposited using R = 4.4, for which the deposition rate showed an Arrhenius-like relationship to substrate temperature. No OH-related bands were observed in our films.

AB - Silicon dioxide (SiOx, x ≤ 2) films were plasma-deposited at a pressure of 1 Torr and low substrate temperature (≤ 300°C) by N2O/SiH4 flow. Deposition rates in the range 20-50 nm/min were achieved at 20 W rf source power. Deep level transient spectroscopy showed that no significant defect levels were introduced in the Si substrates at this low source power. The effects of flowrate ratio, R, of N2O/SiH4 and substrate temperature on film properties were determined using ex-situ spectroscopic ellipsometry, prism coupler, Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR) and chemical etching (P-etch). Near-stoichiometric oxide layers were obtained for R ≥ 1, and a decrease in deposition rate with increasing R was observed. The increase in refractive index for R ≤ 1 has been correlated to compositional changes in the thin films. Complementary results were obtained from FTIR and P-etch measurements. Nitrogen was present in the films deposited using R = 4.4, for which the deposition rate showed an Arrhenius-like relationship to substrate temperature. No OH-related bands were observed in our films.

UR - http://www.scopus.com/inward/record.url?scp=0032591061&partnerID=8YFLogxK

U2 - 10.1557/PROC-555-197

DO - 10.1557/PROC-555-197

M3 - Conference article

SN - 0272-9172

VL - 555

SP - 197

EP - 202

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Characterization of low-temperature PECVD silicon dioxide films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this