Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

A. Bozanic; Z. Majlinger; M. Petravic; Q. Gao; D. Llewellyn; C. Crotti; Y. W. Yang

doi:10.1116/1.2929851

Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

A. Bozanic, Z. Majlinger, M. Petravic^*, Q. Gao, D. Llewellyn, C. Crotti, Y. W. Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core-level and near-edge x-ray absorption fine structure (NEXAFS) around N K edge. Interstitial molecular nitrogen N2 has been formed in all of the samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1s photoemission spectra.

Original language	English
Pages (from-to)	592-596
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	26
Issue number	4
DOIs	https://doi.org/10.1116/1.2929851
Publication status	Published - 2008

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Bozanic, A., Majlinger, Z., Petravic, M., Gao, Q., Llewellyn, D., Crotti, C., & Yang, Y. W. (2008). Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 26(4), 592-596. https://doi.org/10.1116/1.2929851

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title = "Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies",

abstract = "Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core-level and near-edge x-ray absorption fine structure (NEXAFS) around N K edge. Interstitial molecular nitrogen N2 has been formed in all of the samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1s photoemission spectra.",

author = "A. Bozanic and Z. Majlinger and M. Petravic and Q. Gao and D. Llewellyn and C. Crotti and Yang, \{Y. W.\}",

year = "2008",

doi = "10.1116/1.2929851",

language = "English",

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pages = "592--596",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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Bozanic, A, Majlinger, Z, Petravic, M, Gao, Q, Llewellyn, D, Crotti, C & Yang, YW 2008, 'Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 26, no. 4, pp. 592-596. https://doi.org/10.1116/1.2929851

Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies. / Bozanic, A.; Majlinger, Z.; Petravic, M. et al.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 26, No. 4, 2008, p. 592-596.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

AU - Bozanic, A.

AU - Majlinger, Z.

AU - Petravic, M.

AU - Gao, Q.

AU - Llewellyn, D.

AU - Crotti, C.

AU - Yang, Y. W.

PY - 2008

Y1 - 2008

N2 - Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core-level and near-edge x-ray absorption fine structure (NEXAFS) around N K edge. Interstitial molecular nitrogen N2 has been formed in all of the samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1s photoemission spectra.

AB - Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core-level and near-edge x-ray absorption fine structure (NEXAFS) around N K edge. Interstitial molecular nitrogen N2 has been formed in all of the samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1s photoemission spectra.

UR - https://www.scopus.com/pages/publications/46449134079

U2 - 10.1116/1.2929851

DO - 10.1116/1.2929851

M3 - Article

SN - 0734-2101

VL - 26

SP - 592

EP - 596

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

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