Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profiling

M. C. Sulzbach; F. F. Selau; H. Trombini; P. L. Grande; G. G. Marmitt; L. G. Pereira; M. Vos; R. G. Elliman

doi:10.1016/j.nimb.2018.11.026

Characterization of oxygen self-diffusion in TiO₂ resistive-switching layers by nuclear reaction profiling

M. C. Sulzbach, F. F. Selau^*, H. Trombini, P. L. Grande, G. G. Marmitt, L. G. Pereira, M. Vos, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Oxygen self-diffusion was investigated in TiO₂ layers employed for resistive-switching memories using resonant nuclear reaction profiling (NRP) and ¹⁸O labeling. The layers were grown using physical vapor deposition technique (sputtering) and were polycrystalline. The diffusivity was measured over the temperature range 600–800 °C and the activation energy for oxygen self-diffusion in sputter-deposited TiO₂ films determined to be 1.09 ± 0.16 eV, a value consistent with results obtained by previous studies (Marmitt et al., 2017).

Original language	English
Pages (from-to)	8-11
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	441
DOIs	https://doi.org/10.1016/j.nimb.2018.11.026
Publication status	Published - 15 Feb 2019

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Sulzbach, M. C., Selau, F. F., Trombini, H., Grande, P. L., Marmitt, G. G., Pereira, L. G., Vos, M., & Elliman, R. G. (2019). Characterization of oxygen self-diffusion in TiO₂ resistive-switching layers by nuclear reaction profiling. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 441, 8-11. https://doi.org/10.1016/j.nimb.2018.11.026

@article{389b9f9399b84f618d1011a876c095e8,

title = "Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profiling",

abstract = "Oxygen self-diffusion was investigated in TiO2 layers employed for resistive-switching memories using resonant nuclear reaction profiling (NRP) and 18O labeling. The layers were grown using physical vapor deposition technique (sputtering) and were polycrystalline. The diffusivity was measured over the temperature range 600–800 °C and the activation energy for oxygen self-diffusion in sputter-deposited TiO2 films determined to be 1.09 ± 0.16 eV, a value consistent with results obtained by previous studies (Marmitt et al., 2017).",

keywords = "Conducting filaments, Diffusion mechanisms, Nuclear Reaction Analysis, Resistive memories",

author = "Sulzbach, {M. C.} and Selau, {F. F.} and H. Trombini and Grande, {P. L.} and Marmitt, {G. G.} and Pereira, {L. G.} and M. Vos and Elliman, {R. G.}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = feb,

day = "15",

doi = "10.1016/j.nimb.2018.11.026",

language = "English",

volume = "441",

pages = "8--11",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

}

Sulzbach, MC, Selau, FF, Trombini, H, Grande, PL, Marmitt, GG, Pereira, LG, Vos, M & Elliman, RG 2019, 'Characterization of oxygen self-diffusion in TiO₂ resistive-switching layers by nuclear reaction profiling', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 441, pp. 8-11. https://doi.org/10.1016/j.nimb.2018.11.026

Characterization of oxygen self-diffusion in TiO₂ resistive-switching layers by nuclear reaction profiling. / Sulzbach, M. C.; Selau, F. F.; Trombini, H. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 441, 15.02.2019, p. 8-11.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profiling

AU - Sulzbach, M. C.

AU - Selau, F. F.

AU - Trombini, H.

AU - Grande, P. L.

AU - Marmitt, G. G.

AU - Pereira, L. G.

AU - Vos, M.

AU - Elliman, R. G.

PY - 2019/2/15

Y1 - 2019/2/15

N2 - Oxygen self-diffusion was investigated in TiO2 layers employed for resistive-switching memories using resonant nuclear reaction profiling (NRP) and 18O labeling. The layers were grown using physical vapor deposition technique (sputtering) and were polycrystalline. The diffusivity was measured over the temperature range 600–800 °C and the activation energy for oxygen self-diffusion in sputter-deposited TiO2 films determined to be 1.09 ± 0.16 eV, a value consistent with results obtained by previous studies (Marmitt et al., 2017).

AB - Oxygen self-diffusion was investigated in TiO2 layers employed for resistive-switching memories using resonant nuclear reaction profiling (NRP) and 18O labeling. The layers were grown using physical vapor deposition technique (sputtering) and were polycrystalline. The diffusivity was measured over the temperature range 600–800 °C and the activation energy for oxygen self-diffusion in sputter-deposited TiO2 films determined to be 1.09 ± 0.16 eV, a value consistent with results obtained by previous studies (Marmitt et al., 2017).

KW - Conducting filaments

KW - Diffusion mechanisms

KW - Nuclear Reaction Analysis

KW - Resistive memories

UR - http://www.scopus.com/inward/record.url?scp=85059312652&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2018.11.026

DO - 10.1016/j.nimb.2018.11.026

M3 - Article

SN - 0168-583X

VL - 441

SP - 8

EP - 11

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Characterization of oxygen self-diffusion in TiO₂ resistive-switching layers by nuclear reaction profiling

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