Characterization of palladium-related defects in silicon

R. Dogra; A. P. Byrne; D. A. Brett; M. C. Ridgway

doi:10.1007/s10751-008-9618-8

Characterization of palladium-related defects in silicon

R. Dogra^*, A. P. Byrne, D. A. Brett, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Using ¹⁰⁰Pd/¹⁰⁰Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T^3/2 temperature dependence of their electric field gradients.

Original language	English
Pages (from-to)	33-37
Number of pages	5
Journal	Hyperfine Interactions
Volume	177
Issue number	1-3
DOIs	https://doi.org/10.1007/s10751-008-9618-8
Publication status	Published - Jun 2007

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title = "Characterization of palladium-related defects in silicon",

abstract = "Using 100Pd/100Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T3/2 temperature dependence of their electric field gradients.",

keywords = "Defects, Electric field gradient, Palladium, Perturbed angular correlation, Silicon",

author = "R. Dogra and Byrne, {A. P.} and Brett, {D. A.} and Ridgway, {M. C.}",

year = "2007",

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AU - Dogra, R.

AU - Byrne, A. P.

AU - Brett, D. A.

AU - Ridgway, M. C.

PY - 2007/6

Y1 - 2007/6

N2 - Using 100Pd/100Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T3/2 temperature dependence of their electric field gradients.

AB - Using 100Pd/100Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T3/2 temperature dependence of their electric field gradients.

KW - Defects

KW - Electric field gradient

KW - Palladium

KW - Perturbed angular correlation

KW - Silicon

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DO - 10.1007/s10751-008-9618-8

M3 - Article

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VL - 177

SP - 33

EP - 37

JO - Hyperfine Interactions

JF - Hyperfine Interactions

IS - 1-3

ER -

Characterization of palladium-related defects in silicon

Abstract

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