Charge stability in LPCVD silicon nitride for surface passivation of silicon solar cells

Yongling Ren; Natalita M. Nursam; Da Wang; Klaus J. Weber

doi:10.1109/PVSC.2010.5614143

Charge stability in LPCVD silicon nitride for surface passivation of silicon solar cells

Yongling Ren^*, Natalita M. Nursam, Da Wang, Klaus J. Weber

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

Negatively charged dielectric films are of great interest for application to silicon solar cells, since such films offer the possibility of excellent passivation of p type surfaces. This paper investigates the distribution and stability of negative charge in silicon dioxide / LPCVD silicon nitride films which have been negatively charged through the injection of electrons from the silicon substrate. High densities of negative charge (5-10×10 ¹²cm^-2) can be stored in the silicon nitride films. The negative charge is determined to be mainly concentrated at the oxide/nitride interface. The thermal stability of the charge is shown to be improved by the presence of a barrier layer on top of the silicon nitride. Modelling indicates that the thermal stability is likely to be sufficient for application to solar cells, which will operate at elevated temperatures for 25 years or more.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	897-901
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5614143
Publication status	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	20/06/10 → 25/06/10

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10.1109/PVSC.2010.5614143

Cite this

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title = "Charge stability in LPCVD silicon nitride for surface passivation of silicon solar cells",

abstract = "Negatively charged dielectric films are of great interest for application to silicon solar cells, since such films offer the possibility of excellent passivation of p type surfaces. This paper investigates the distribution and stability of negative charge in silicon dioxide / LPCVD silicon nitride films which have been negatively charged through the injection of electrons from the silicon substrate. High densities of negative charge (5-10×10 12cm-2) can be stored in the silicon nitride films. The negative charge is determined to be mainly concentrated at the oxide/nitride interface. The thermal stability of the charge is shown to be improved by the presence of a barrier layer on top of the silicon nitride. Modelling indicates that the thermal stability is likely to be sufficient for application to solar cells, which will operate at elevated temperatures for 25 years or more.",

author = "Yongling Ren and Nursam, {Natalita M.} and Da Wang and Weber, {Klaus J.}",

year = "2010",

doi = "10.1109/PVSC.2010.5614143",

language = "English",

isbn = "9781424458912",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "897--901",

booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

}

Ren, Y, Nursam, NM, Wang, D & Weber, KJ 2010, Charge stability in LPCVD silicon nitride for surface passivation of silicon solar cells. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614143, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 897-901, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 20/06/10. https://doi.org/10.1109/PVSC.2010.5614143

Charge stability in LPCVD silicon nitride for surface passivation of silicon solar cells. / Ren, Yongling; Nursam, Natalita M.; Wang, Da et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 897-901 5614143 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Charge stability in LPCVD silicon nitride for surface passivation of silicon solar cells

AU - Ren, Yongling

AU - Nursam, Natalita M.

AU - Wang, Da

AU - Weber, Klaus J.

PY - 2010

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N2 - Negatively charged dielectric films are of great interest for application to silicon solar cells, since such films offer the possibility of excellent passivation of p type surfaces. This paper investigates the distribution and stability of negative charge in silicon dioxide / LPCVD silicon nitride films which have been negatively charged through the injection of electrons from the silicon substrate. High densities of negative charge (5-10×10 12cm-2) can be stored in the silicon nitride films. The negative charge is determined to be mainly concentrated at the oxide/nitride interface. The thermal stability of the charge is shown to be improved by the presence of a barrier layer on top of the silicon nitride. Modelling indicates that the thermal stability is likely to be sufficient for application to solar cells, which will operate at elevated temperatures for 25 years or more.

AB - Negatively charged dielectric films are of great interest for application to silicon solar cells, since such films offer the possibility of excellent passivation of p type surfaces. This paper investigates the distribution and stability of negative charge in silicon dioxide / LPCVD silicon nitride films which have been negatively charged through the injection of electrons from the silicon substrate. High densities of negative charge (5-10×10 12cm-2) can be stored in the silicon nitride films. The negative charge is determined to be mainly concentrated at the oxide/nitride interface. The thermal stability of the charge is shown to be improved by the presence of a barrier layer on top of the silicon nitride. Modelling indicates that the thermal stability is likely to be sufficient for application to solar cells, which will operate at elevated temperatures for 25 years or more.

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EP - 901

BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

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Y2 - 20 June 2010 through 25 June 2010

ER -

Charge stability in LPCVD silicon nitride for surface passivation of silicon solar cells

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