Charge trapping and storage in SiNx thin films deposited with Oxford PlasmaLab 100 system

Yongling Ren; Klaus Weber; Fouad Karouta; Kaushal Vora; Wensheng Liang

doi:10.1109/PVSC.2012.6317793

Charge trapping and storage in SiN_x thin films deposited with Oxford PlasmaLab 100 system

Yongling Ren^*, Klaus Weber, Fouad Karouta, Kaushal Vora, Wensheng Liang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Negative charges in silicon nitride films are beneficial for surface passivation of rear side of p type solar cells.[1] Previous studies indicates that N-rich SiN_x films in an oxide-nitride-oxide structure display good charge trapping and storage ability. In this work, an Oxford PlasmaLab 100 PECVD system is used to vary the deposition conditions (temperature and RF power). SiN_x films deposited at 400°C and RF=60W show an initial negative charge density of 1.2×10¹³/cm² after negative charge injection. Modeling results suggest that tunnel oxide may not be necessary for achieving good charge stability, which will make the application more flexible.

Original language	English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	1094-1097
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2012.6317793
Publication status	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	3/06/12 → 8/06/12

Access to Document

10.1109/PVSC.2012.6317793

Cite this

@inproceedings{fc087efad8924e10a463bfbcd97ec9ee,

title = "Charge trapping and storage in SiNx thin films deposited with Oxford PlasmaLab 100 system",

abstract = "Negative charges in silicon nitride films are beneficial for surface passivation of rear side of p type solar cells.[1] Previous studies indicates that N-rich SiNx films in an oxide-nitride-oxide structure display good charge trapping and storage ability. In this work, an Oxford PlasmaLab 100 PECVD system is used to vary the deposition conditions (temperature and RF power). SiNx films deposited at 400°C and RF=60W show an initial negative charge density of 1.2×1013/cm2 after negative charge injection. Modeling results suggest that tunnel oxide may not be necessary for achieving good charge stability, which will make the application more flexible.",

keywords = "Charge, Oxford PlasmaLab 100 System, SiN films, solar cells, surface passivation",

author = "Yongling Ren and Klaus Weber and Fouad Karouta and Kaushal Vora and Wensheng Liang",

year = "2012",

doi = "10.1109/PVSC.2012.6317793",

language = "English",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "1094--1097",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Ren, Y, Weber, K, Karouta, F, Vora, K & Liang, W 2012, Charge trapping and storage in SiN_x thin films deposited with Oxford PlasmaLab 100 system. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317793, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1094-1097, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 3/06/12. https://doi.org/10.1109/PVSC.2012.6317793

Charge trapping and storage in SiN_x thin films deposited with Oxford PlasmaLab 100 system. / Ren, Yongling; Weber, Klaus; Karouta, Fouad et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 1094-1097 6317793 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Charge trapping and storage in SiNx thin films deposited with Oxford PlasmaLab 100 system

AU - Ren, Yongling

AU - Weber, Klaus

AU - Karouta, Fouad

AU - Vora, Kaushal

AU - Liang, Wensheng

PY - 2012

Y1 - 2012

N2 - Negative charges in silicon nitride films are beneficial for surface passivation of rear side of p type solar cells.[1] Previous studies indicates that N-rich SiNx films in an oxide-nitride-oxide structure display good charge trapping and storage ability. In this work, an Oxford PlasmaLab 100 PECVD system is used to vary the deposition conditions (temperature and RF power). SiNx films deposited at 400°C and RF=60W show an initial negative charge density of 1.2×1013/cm2 after negative charge injection. Modeling results suggest that tunnel oxide may not be necessary for achieving good charge stability, which will make the application more flexible.

AB - Negative charges in silicon nitride films are beneficial for surface passivation of rear side of p type solar cells.[1] Previous studies indicates that N-rich SiNx films in an oxide-nitride-oxide structure display good charge trapping and storage ability. In this work, an Oxford PlasmaLab 100 PECVD system is used to vary the deposition conditions (temperature and RF power). SiNx films deposited at 400°C and RF=60W show an initial negative charge density of 1.2×1013/cm2 after negative charge injection. Modeling results suggest that tunnel oxide may not be necessary for achieving good charge stability, which will make the application more flexible.

KW - Charge

KW - Oxford PlasmaLab 100 System

KW - SiN films

KW - solar cells

KW - surface passivation

UR - http://www.scopus.com/inward/record.url?scp=84869385898&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2012.6317793

DO - 10.1109/PVSC.2012.6317793

M3 - Conference contribution

SN - 9781467300643

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1094

EP - 1097

BT - Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

T2 - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012

Y2 - 3 June 2012 through 8 June 2012

ER -