Clusterization of vacancy defects in ZnO irradiated with 2 MeV O                         +

A. Zubiaga; F. Tuomisto; V. A. Coleman; C. Jagadish

doi:10.1016/j.apsusc.2008.05.197

Clusterization of vacancy defects in ZnO irradiated with 2 MeV O ⁺

A. Zubiaga^*, F. Tuomisto, V. A. Coleman, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Slow positrons have been used to study ZnO layers grown on a-axis sapphire and irradiated by 2 MeV O ⁺ ions to fluences from 10 ¹² cm ^-2 to 10 ¹⁷ cm ^-2 . At low fluences Zn vacancies are observed, and their introduction rate is estimated as 2000 cm ^-1 . At the highest fluences of 10 ¹⁶ -10 ¹⁷ cm ^-2 vacancy clusters are formed. The extent of the primary damage and its recovery is discussed.

Original language	English
Pages (from-to)	234-236
Number of pages	3
Journal	Applied Surface Science
Volume	255
Issue number	1
DOIs	https://doi.org/10.1016/j.apsusc.2008.05.197
Publication status	Published - 31 Oct 2008

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title = " Clusterization of vacancy defects in ZnO irradiated with 2 MeV O + ",

abstract = " Slow positrons have been used to study ZnO layers grown on a-axis sapphire and irradiated by 2 MeV O + ions to fluences from 10 12 cm -2 to 10 17 cm -2 . At low fluences Zn vacancies are observed, and their introduction rate is estimated as 2000 cm -1 . At the highest fluences of 10 16 -10 17 cm -2 vacancy clusters are formed. The extent of the primary damage and its recovery is discussed.",

keywords = "Irradiation, Point-Defects, Positron Spectroscopy, Thin-Films, ZnO",

author = "A. Zubiaga and F. Tuomisto and Coleman, {V. A.} and C. Jagadish",

year = "2008",

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T1 - Clusterization of vacancy defects in ZnO irradiated with 2 MeV O +

AU - Zubiaga, A.

AU - Tuomisto, F.

AU - Coleman, V. A.

AU - Jagadish, C.

PY - 2008/10/31

Y1 - 2008/10/31

N2 - Slow positrons have been used to study ZnO layers grown on a-axis sapphire and irradiated by 2 MeV O + ions to fluences from 10 12 cm -2 to 10 17 cm -2 . At low fluences Zn vacancies are observed, and their introduction rate is estimated as 2000 cm -1 . At the highest fluences of 10 16 -10 17 cm -2 vacancy clusters are formed. The extent of the primary damage and its recovery is discussed.

AB - Slow positrons have been used to study ZnO layers grown on a-axis sapphire and irradiated by 2 MeV O + ions to fluences from 10 12 cm -2 to 10 17 cm -2 . At low fluences Zn vacancies are observed, and their introduction rate is estimated as 2000 cm -1 . At the highest fluences of 10 16 -10 17 cm -2 vacancy clusters are formed. The extent of the primary damage and its recovery is discussed.

KW - Irradiation

KW - Point-Defects

KW - Positron Spectroscopy

KW - Thin-Films

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=53049098432&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.05.197

DO - 10.1016/j.apsusc.2008.05.197

M3 - Article

SN - 0169-4332

VL - 255

SP - 234

EP - 236

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1

ER -

Clusterization of vacancy defects in ZnO irradiated with 2 MeV O ⁺

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